tk50p03m1 TOSHIBA Semiconductor CORPORATION, tk50p03m1 Datasheet

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tk50p03m1

Manufacturer Part Number
tk50p03m1
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
High-Efficiency DC-DC Converter Applications
Desktop PC Applications
Absolute Maximum Ratings
High-speed switching
Small gate charge: Q
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: For Notes 1 to 3, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
(Tc=25℃) (Note 3)
GS
DC
Pulsed (Note 1)
SW
DSS
= 20 kΩ)
th
= 8.2 nC (typ.)
= 1.3 to 2.3 V (V
(Note 1)
= 10 μA (max) (V
(Note 2)
DS (ON)
fs
(Ta = 25°C)
TK50P03M1
| = 90 S (typ.)
Symbol
V
V
V
E
E
T
I
I
T
DGR
GSS
P
DSS
I
DP
AR
AS
AR
stg
D
ch
DS
D
= 5.8 mΩ (typ.)
DS
= 10 V, I
= 30 V)
−55 to 150
D
Rating
±20
150
150
5.2
30
30
50
60
65
50
= 0.2 mA)
1
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
0.76 ± 0.12
1.14MAX
1
5.34 ± 0.13
1. GATE
2. DRAIN
3. SOURSE
6.6 ± 0.2
(HEAT SINK)
2
2.29
TK50P03M1
3
2-7K1A
2009-09-08
0.58MAX
Unit: mm

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tk50p03m1 Summary of contents

Page 1

... 150 5 150 °C ch −55 to 150 T °C stg 1 TK50P03M1 Unit: mm 6.6 ± 0.2 5.34 ± 0.13 0.58MAX 1.14MAX 2.29 0.76 ± 0. GATE 2. DRAIN (HEAT SINK) 3. SOURSE JEDEC ― JEITA ― TOSHIBA 2-7K1A Weight: 0.36 g (typ.) 2009-09-08 ...

Page 2

... Weekly code: (Four digits) Week of manufacture (01 for first week of year, continuing 53) Year of manufacture (The last 2 digits of the calendar year) Symbol Max R 2.08 ° (ch−c) R 125 ° (ch−a) Part No. (or abbreviation code) Lot No Ω TK50P03M1 Unit = 50 A 2009-09-08 ...

Page 3

... gs1 ≈ (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TK50P03M1 Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 10 ⎯ 30 ⎯ 15 ⎯ 1.3 2.3 ⎯ 7.5 9.8 ⎯ 5.8 7 ⎯ ...

Page 4

... Drain-source voltage V 0.8 0.6 0.4 0 (V) Gate-source voltage V 100 Common source ℃ Pulse test 10 1 100 1 4 TK50P03M1 I – 4 3.8 3 3.2 V Common source Ta = 25°C Pulse test 0.8 2 0.4 1.2 1.6 ( – Common source Ta = 25℃ ...

Page 5

... C oss 1 C rss Common source 0 0.2 mA Pulse test 0 100 −80 −40 ( 160 0 C) ° 5 TK50P03M1 I – 4 −0.2 −0.4 −0.6 −0.8 −1.0 ( – 120 160 Ambient temperature ° ...

Page 6

... Pulse width t (s) w 100 Channel temperature (initial) Tch ( 100 ( −15 V Test circuit = 25 Ω μ TK50P03M1 Duty = t (ch-c) = 2.08 °C – Tch 100 125 150 C) ° B VDSS ...

Page 7

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TK50P03M1 2009-09-08 ...

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