mrf7s21170h Freescale Semiconductor, Inc, mrf7s21170h Datasheet - Page 10
mrf7s21170h
Manufacturer Part Number
mrf7s21170h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MRF7S21170H.pdf
(13 pages)
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MRF7S21170HR3 MRF7S21170HSR3
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32
NOTE: Measured in a Peak Tuned Load Pull Fixture
P1dB = 52.75 dBm
(188 W)
33
P3dB
Figure 17. Pulsed CW Output Power
P3dB = 53.56 dBm (226 W)
34
Test Impedances per Compression Level
35
versus Input Power
4.43 - j11.85
P
P6dB = 53.89 dBm (244 W)
36
in
, INPUT POWER (dBm)
Z
V
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
source
DD
Ω
37
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
= 28 Vdc, I
38
39
DQ
= 1400 m, Pulsed CW
40
0.81 - j2.87
Z
41
load
Ω
42
Ideal
Actual
43
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53
52
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NOTE: Measured in a Peak Tuned Load Pull Fixture
P1dB = 53.54 dBm
(226 W)
34
P3dB
Figure 18. Pulsed CW Output Power
P3dB = 54.65 dBm (290 W)
35
Test Impedances per Compression Level
36
versus Input Power
4.43 - j11.85
P
V
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
37
in
DD
, INPUT POWER (dBm)
Z
source
= 32 Vdc, I
P6dB = 54.88 dBm (307 W)
Ω
38
39
DQ
Freescale Semiconductor
40
= 1400 mA, Pulsed CW
41
0.72 - j2.87
Z
42
load
RF Device Data
Ω
43
Ideal
Actual
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