st744 Polyfet RF Devices, st744 Datasheet
st744
Manufacturer Part Number
st744
Description
Rf Power Vdmos Transistor
Manufacturer
Polyfet RF Devices
Datasheet
1.ST744.pdf
(2 pages)
low feedback and output capacitances,
resulting in high F transistors with high
input impedance and high efficiency.
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
General Description
SYMBOL
SYMBOL
"Polyfet"
Silicon VDMOS and LDMOS
VSWR
gM
Idss
Igss
Rdson
Idsat
Ciss
Crss
Coss
Gps
Bvdss
Vgs
190
Dissipation
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
Device
Watts
Total
TM
Load Mismatch Tolerance
Zero Bias Drain Current
Forward Transconductance
Saturation Resistance
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
PARAMETER
Common Source Power Gain
Drain Efficiency
PARAMETER
Drain Breakdown Voltage
Gate Leakage Current
Gate Bias for Drain Current
Saturation Current
process features
t
Case Thermal
polyfet rf devices
Resistance
0.85 C/W
Junction to
o
Temperature
RF CHARACTERISTICS ( 100.0
Maximum
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
ABSOLUTE MAXIMUM RATINGS ( T =
Junction
200
o
C
-65 C to 150 C
POLYFET RF DEVICES
Temperature
MIN
MIN
o
125
1
16
Storage
192.0
14.00
TYP
TYP
o
45
0.65
68.0
3.2
0.8
DC Drain
Current
MAX
MAX
1
7
4.0
5:1
7.0
WATTS OUTPUT )
A
SILICON GATE ENHANCEMENT MODE
Relative
UNITS
UNITS
Ohm
Mho
RF POWER
Amp
pF
pF
dB
pF
mA
uA
%
V
V
HIGH EFFICIENCY, LINEAR
25 C )
o
Drain to
Voltage
125
HIGH GAIN, LOW NOISE
Idq =
Idq =
Idq = 0.80
TEST CONDITIONS
TEST CONDITIONS
100.0
Gate
Vds =
Ids =
Vgs = 20V, Ids =
Vds =
Vds =
Vds =
V
Vds = 0V Vgs = 30V
Vds = 10V, Vgs = 5V
Vgs = 20V, Vds = 10V
Ids =
Package Style
0.80
0.80
0.20
REVISION 07/17/2003
VDMOS
40.00
50.0
Watts
50.0
50.0
50.0
A, Vds =
A, Vds =
A, Vds =
A, Vgs = Vds
V, Vgs = 0V
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
mA, Vgs = 0V
Drain to
Voltage
125
Source
Single Ended
V
4.00
TRANSISTOR
50.0
50.0
50.0
AT
A
V, F =
V, F =
V, F =
ST744
Voltage
Source
Gate to
20
175
175
175
V
MHz
MHz
MHz
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st744 Summary of contents
Page 1
... Vds = 10V, Vgs = 5V Ohm Vgs = 20V, Ids = 4.00 Amp Vgs = 20V, Vds = 10V 50.0 Vgs = 0V MHz pF Vds = 50.0 Vgs = 0V MHz Vds = pF 50.0 Vgs = 0V MHz Vds = pF REVISION 07/17/2003 ST744 TRANSISTOR AT Gate to Source Voltage 20 V 50.0 175 MHz 50.0 175 MHz 50.0 175 MHz ...
Page 2
... tts IV CURVE S1E 4 DIE VDS IN VOLTS vg=2v Vg=4v Vg=6v vg=8v Zin Zout 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com ST744 1000 20 19 100 18 Pout Gain 0 100.00 10.00 1.00 0. ...