b052n06l3 Infineon Technologies Corporation, b052n06l3 Datasheet - Page 6

• Manufacturer Part Number: b052n06l3
• Description: Optimos 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.2
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
12
10
DS
=f(T
4
3
2
1
8
6
4
2
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=80 A; V
20
20
GS
max
V
=10 V
Crss
T
Coss
Ciss
DS
j
60
[°C]
[V]
typ
100
40
140
180
60
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
2.5
1.5
0.5
10
10
10
10
3
2
1
0
=f(T
SD
3
2
1
0
-60
0
)
j
); V
D
j
-20
GS
IPB049N06L3 G IPP052N06L3 G
=V
0.5
DS
175 °C
20
58µA
T
V
25 °C
25 °C, 98%
j
SD
60
[°C]
1
[V]
580 µA
100
1.5
175 °C, 98%
140
2009-02-12
180
2