ndf10n60zh ON Semiconductor, ndf10n60zh Datasheet - Page 2

• Manufacturer Part Number: ndf10n60zh
• Description: Ndf10n60zh Product Preview N-channel Power Mosfet 600 V, 0.75 W
• Manufacturer: ON Semiconductor

4. Insertion mounted
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
DYNAMIC CHARACTERISTICS
RESISTIVE SWITCHING CHARACTERISTICS
SOURCE−DRAIN DIODE CHARACTERISTICS (T
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
Gate−to−Source Forward Leakage
Static Drain−to−Source
On−Resistance
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Plateau Voltage
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction−to−Case (Drain)
Junction−to−Ambient Steady State (Note 4)
Characteristic
(T
Parameter
V
J
DS
= 25°C unless otherwise noted)
I
S
= 600 V, V
V
V
V
V
V
V
V
V
V
= 10 A, di/dt = 100 A/ms
DS
DD
DD
I
DS
C
GS
Reference to 25°C,
GS
S
GS
DS
GS
Test Conditions
= 25°C unless otherwise noted)
= 10 A, V
= V
= 300 V, I
= 300 V, I
= 25 V, V
= 0 V, V
V
= 10 V, I
= 15 V, I
= 10 V, R
f = 1.0 MHz
= 0 V, I
V
I
GS
D
GS
GS
http://onsemi.com
= 1 mA
GS
= ±20 V
, I
= 10 V
D
D
DD
= 0 V
GS
D
D
GS
D
D
= 100 mA
= 1 mA
G
= 5.0 A
= 10 A
= 10 A,
= 10 A,
= 30 V
= 0 V
= 5 W
= 0 V,
2
125°C
25°C
DBV
Symbol
R
V
BV
t
t
I
C
I
DS(on)
DT
GS(th)
C
C
V
V
g
Q
Q
d(on)
d(off)
GSS
DSS
Q
Q
R
t
oss
t
FS
rss
GP
t
SD
DSS
iss
rr
gs
gd
r
f
DSS
g
g
rr
J
/
Min
600
3.0
Symbol
R
R
qJC
qJA
1425
0.65
Typ
150
395
0.6
7.9
9.0
6.3
1.5
3.0
35
47
26
15
31
40
23
Typ
3.4
50
Max
0.75
±10
4.5
1.6
50
1
°C/W
V/°C
Unit
Unit
mA
mA
pF
nC
mC
ns
ns
W
W
V
V
S
V
V