ntb35n15 ON Semiconductor, ntb35n15 Datasheet

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ntb35n15

Manufacturer Part Number
ntb35n15
Description
Power Mosfet 37 Amps, 150 Volts N-channel Enhancement-mode D2pak
Manufacturer
ON Semiconductor
Datasheet

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NTB35N15
Power MOSFET
37 Amps, 150 Volts
N−Channel Enhancement−Mode D
Features
Typical Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
2. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 5
Drain−to−Source Voltage
Drain−to−Source Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Derate above 25°C
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
I
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
L(pk)
Fast Recovery Diode
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Avalanche Energy Specified
I
Mounting Information Provided for the D
Pb−Free Packages are Available
PWM Motor Controls
Power Supplies
Converters
pad size, (Cu. Area 0.412 in
DD
DSS
= 21.6 A, L = 3.0 mH, R
= 100 Vdc, V
and R
DS(on)
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
− Continuous @ T
− Continuous @ T
− Pulsed (Note 2)
− Continuous
− Non−Repetitive (t
GS
J
Rating
Specified at Elevated Temperature
= 25°C
= 10 Vdc,
(T
J
= 25°C unless otherwise noted)
GS
A
A
G
2
= 25°C
= 25°C (Note 1)
).
= 1.0 MW)
= 25 W)
A
A
= 25°C
= 100°C
p
v10 ms)
2
PAK Package
Symbol
T
V
V
V
R
R
R
J
V
E
I
GSM
P
DGR
, T
T
DSS
I
I
DM
qJC
qJA
qJA
GS
D
D
AS
D
L
stg
−55 to
Value
+150
"20
"40
1.43
62.5
150
150
178
700
260
2
111
2.0
0.7
37
23
50
PAK
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
mJ
°C
°C
W
W
NTB35N15
NTB35N15G
NTB35N15T4
NTB35N15T4G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Device
CASE 418B
37 AMPERES, 150 VOLTS
2
STYLE 2
D
3
2
35N15
A
Y
WW
G
50 mW @ V
ORDERING INFORMATION
PAK
G
http://onsemi.com
4
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
N−Channel
(Pb−Free)
(Pb−Free)
Package
D
D
D
D
2
2
2
2
D
PAK
PAK
PAK
PAK
Publication Order Number:
MARKING DIAGRAM
& PIN ASSIGNMENT
Gate
GS
S
1
= 10 V
35N15G
AYWW
Drain
Drain
800 Tape & Reel
800 Tape & Reel
4
2
50 Units/Rail
50 Units/Rail
Shipping
NTB35N15/D
3
Source

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ntb35n15 Summary of contents

Page 1

... R 62.5 qJA NTB35N15 50 R qJA NTB35N15G °C T 260 L NTB35N15T4 NTB35N15T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com 37 AMPERES, 150 VOLTS N−Channel D G ...

Page 2

... BODY−DRAIN DIODE RATINGS (Note 3) Diode Forward On−Voltage ( Adc Reverse Recovery Time Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 4. Switching characteristics are independent of operating junction temperature. NTB35N15 (T = 25°C unless otherwise noted 18.5 Adc) D ...

Page 3

... Figure 3. On−Resistance versus Drain Current and Temperature 2 1.75 1.5 1.25 1.0 0.75 0.5 0.25 0 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTB35N15 25°C ≥ 4 GATE− ...

Page 4

... GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) NTB35N15 POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET ...

Page 5

... T )/(R ). qJC J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For NTB35N15 1000 120 100 ...

Page 6

... V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 Figure 14. Diode Reverse Recovery Waveform NTB35N15 SAFE OPERATING AREA 700 600 10 ms 500 400 100 ms 300 200 dc 100 0 100 1000 25 T Figure 12. Maximum Avalanche Energy versus ...

Page 7

... CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTB35N15 PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 8

... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTB35N15/D ...

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