ssf3615 Silikron Semiconductor Co.,LTD., ssf3615 Datasheet - Page 2

• Manufacturer Part Number: ssf3615
• Description: He Ssf3615 Uses Advanced Trench Technology To Provide Excellent Rds On And Low Gate Charge .
• Manufacturer: Silikron Semiconductor Co.,LTD.

Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2
FR4 Board, t ≤ 10 sec.
R
V
t
t
I
DS(ON)
C
I
C
C
Q
V
g
Q
GS(th)
d(on)
d(off)
GSS
Q
Q
DSS
T
t
t
FS
oss
rss
SD
lss
r
f
gs
gd
rr
rr
g
V =-15V,V =-10V,R
2
V =-15V,I
DS
DS
I
F
V =-4.5V, I
=-10A, dI/dt=100A/µs
V =V
V =±25V,V =0V
V =-10V, I
V =-15V,V
V =-30V,V =0V
GS
V =-5V,I
DS
GS
GS
DS
DS
V =0V,I =-1A
DS
GS
F=1.0MHz
GS
D
GS
I
D
=-10A,V =-10V
,I
=1A
D
=-250μA
D
S
D
D
=-10A
GS
GS
DS
=-7.5A
=-10A
=0V,
http://www.silikron.com
GS
GEN
=3Ω
-1.7
1200
-0.74
-2.2
240
150
9.5
8.5
3.5
14
18
20
18
24
12
9
8
5
SSF3615
±100
19
12
-1
-3
-1
v1.1
mΩ
mΩ
PF
PF
PF
nC
nC
nC
nC
μA
nA
nS
nS
nS
nS
nS
V
S
V