mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 63
mt46h32m16lf
Manufacturer Part Number
mt46h32m16lf
Description
512mb X16, X32 Mobile Ddr Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H32M16LF.pdf
(84 pages)
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Figure 25:
Figure 26:
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
WRITE Burst
Consecutive WRITE-to-WRITE
Notes:
Notes:
1. D
2. An uninterrupted burst of 4 is shown.
3. A10 is LOW with the WRITE command (auto precharge is disabled).
Command
1. D
2. An uninterrupted burst of 4 is shown.
3. Each WRITE command may be to any bank.
Command
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
Address
Address
IN
IN
DQS
CK#
DM
DQ
DQS
DQS
DQS
CK
CK#
DM
DM
DM
DQ
DQ
DQ
CK
b = data-in for column b.
b (n) = data-in for column b (n).
WRITE
Bank,
Col b
Bank a,
T0
WRITE
Col b
T0
t
DQSS (NOM)
t DQSS
t DQSS
t DQSS
D
b
IN
NOP
D
T1
b
NOP
IN
D
T1
b
IN
63
b+1
D
D
b
IN
IN
Don’t Care
T1n
b+1
D
IN
b+1
D
IN
b+2
D
D
b+1
IN
IN
WRITE
Bank,
Col n
b+2
D
T2
NOP
b+2
IN
T2
D
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IN
b+2
b+3
D
D
IN
IN
T2n
b+3
D
T2n
IN
b+3
D
IN
Transitioning Data
b+3
D
IN
T3
NOP
D
n
IN
T3
NOP
Don’t Care
T3n
n+1
D
IN
n+2
D
T4
NOP
Mobile DDR SDRAM
IN
©2007 Micron Technology, Inc. All rights reserved
T4n
n+3
D
IN
Transitioning Data
T5
NOP
Operations