ap4407m ETC-unknow, ap4407m Datasheet

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ap4407m

Manufacturer Part Number
ap4407m
Description
P-channel Enhancement Mode Power Mosfet
Manufacturer
ETC-unknow
Datasheet
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Low On-resistance
▼ ▼ ▼ ▼ Fast Switching
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-amb
Description
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
Parameter
1
D
3
3
D
SO-8
D
D
3
S
S
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
Max.
-55 to 150
-55 to 150
Rating
BV
R
I
± 25
-10.7
D
G
0.02
-8.6
-30
-50
2.5
DS(ON)
DSS
Value
50
AP4407M
D
S
14mΩ
-10.7A
-30V
Units
W/℃
℃/W
200728031
Unit
W
V
V
A
A
A

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ap4407m Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-amb Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP4407M BV -30V DSS R 14mΩ DS(ON) I -10. Rating Units -30 ± 25 -10.7 -8.6 -50 2.5 0.02 W/℃ -55 to 150 ...

Page 2

... AP4407M Electrical Characteristics@T Symbol BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I =-10A 1. = 1.40 1.20 1.00 0.80 0. -50 Fig 4. Normalized On-Resistance 1.3 1.5 -50 Fig 6. Gate Threshold Voltage v.s. AP4407M o C -10V -5.0V -4.5V -4.0V V =-3. Drain-to-Source Voltage (V) DS =-10A = -10V 0 50 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

Page 4

... AP4407M -10A -24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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