mc68hc912dg128 Freescale Semiconductor, Inc, mc68hc912dg128 Datasheet - Page 424

• Manufacturer Part Number: mc68hc912dg128
• Description: M68hc12 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

Appendix: MC68HC912DG128A Flash
21.8 Programming the Flash EEPROM
Technical Data
424
Programming the Flash EEPROM is done on a row basis. A row consists
of 64 consecutive bytes starting from addresses $XX00, $XX40, $XX80
and $XXC0. Use this step-by-step procedure to program a row of Flash
memory.
This program sequence is repeated throughout the memory until all data
is programmed. For minimum overall programming time and least
program disturb effect, the sequence should be part of an intelligent
operation which iterates per row.
10. Wait for a time, t
11. Clear the HVEN bit.
12. After time, t
1. Set the PGM bit. This configures the memory for program
2. Write to any Flash address with any data within the row address
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write to the Flash address with data to the word desired to be
7. Wait for a time, t
8. Repeat steps 6 and 7 until all the words within the row are
9. Clear the PGM bit.
Freescale Semiconductor, Inc.
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operation and enables the latching of address and data for
programming.
range desired.
programmed. If BOOTP is asserted, an attempt to program an
address in the boot block will be ignored.
programmed.
mode again.
Appendix: MC68HC912DG128A Flash
Go to: www.freescale.com
RCV
(min 1 s), the memory can be accessed in read
NVS
PGS
FPGM
NVH
(min. 10 s).
(min. 5 s).
(min. 5 s).
(min. 30 s).
MC68HC912DG128 — Rev 3.0
MOTOROLA