rc28f320j3d75d Numonyx, rc28f320j3d75d Datasheet

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rc28f320j3d75d

Manufacturer Part Number
rc28f320j3d75d
Description
Manufacturer
Numonyx
Datasheet
Numonyx™ Embedded Flash Memory
(J3 v. D)
32, 64, 128, and 256 Mbit
Product Features
Architecture
— High-density symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
Performance
— 75 ns Initial Access Speed (128/64/32
— 95 ns Initial Access Speed (256 Mbit only)
— 25 ns 8-word and 4-word Asynchronous
— 32-Byte Write buffer
— 4 µs per Byte Effective programming time
System Voltage and Power
— V
— V
Packaging
— 56-Lead TSOP package (32, 64, 128 Mbit
— 64-Ball Numonyx Easy BGA package (32,
-Mbit densities)
page-mode reads
only)
42, 128 and 256 Mbit)
CC
CCQ
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
Security
— Enhanced security options for code
— 128-bit Protection Register
— 64-bit Unique device identifier
— 64-bit User-programmable OTP cells
— Absolute protection with V
— Individual block locking
— Block erase/program lockout during power
Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash
Quality and Reliability
— Operating temperature:
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process
protection
transitions
Interface (CFI) Compatible
-40 °C to +85 °C
PEN
= GND
Datasheet
November 2007
308551-05

Related parts for rc28f320j3d75d

rc28f320j3d75d Summary of contents

Page 1

... 3.6 V CCQ Packaging — 56-Lead TSOP package (32, 64, 128 Mbit only) — 64-Ball Numonyx Easy BGA package (32, 42, 128 and 256 Mbit) Security — Enhanced security options for code protection — 128-bit Protection Register — 64-bit Unique device identifier — ...

Page 2

... Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx's website at http://www.numonyx.com. ...

Page 3

... Numonyx™ Embedded Flash Memory ( Contents 1.0 Introduction .............................................................................................................. 6 1.1 Nomenclature ..................................................................................................... 6 1.2 Acronyms........................................................................................................... 6 1.3 Conventions ....................................................................................................... 7 2.0 Functional Overview .................................................................................................. 8 2.1 Block Diagram .................................................................................................. 10 2.2 Memory Map..................................................................................................... 11 3.0 Package Information ............................................................................................... 12 3.1 56-Lead TSOP Package (32, 64, 128 Mbit) ............................................................ 12 3.2 Easy BGA Package (32, 64, 128 and 256 Mbit) ...................................................... 13 4.0 Ballouts and Signal Descriptions.............................................................................. 15 4.1 Easy BGA Ballout (32/64/128 Mbit) ..................................................................... 15 4 ...

Page 4

... Common Flash Interface ..........................................................................................58 13.1 Query Structure Output ......................................................................................58 13.2 Query Structure Overview...................................................................................59 13.3 Block Status Register .........................................................................................60 13.4 CFI Query Identification String ............................................................................60 13.5 System Interface Information ..............................................................................61 13.6 Device Geometry Definition .................................................................................61 13.7 Primary-Vendor Specific Extended Query Table ......................................................62 A Additional Information.............................................................................................66 B Ordering Information ...............................................................................................67 Datasheet 4 Numonyx™ Embedded Flash Memory ( November 2007 308551-05 ...

Page 5

... Numonyx™ Embedded Flash Memory ( Revision History Date Revision Description July 2005 001 Initial release Changed Marketing name from 28FxxxJ3 Updated the following: • Table 18, “Command Bus Operations” on page 35 September 2005 002 • Section 9.2.2, “Read Status Register” on page 38 • ...

Page 6

... This document contains information pertaining to the Numonyx™ Embedded Flash Memory ( device features, operation, and specifications. The Numonyx™ Embedded Flash Memory J3 Version D ( provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based Intel* 0.13 µm ETOX™ VIII process technology. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the Numonyx™ ...

Page 7

... Numonyx™ Embedded Flash Memory ( SR: Status Register SRD: Status Register Data WSM: Write State Machine ECR: Enhanced Configuration Register 1.3 Conventions h: Hexadecimal Affix k (noun): 1,000 M (noun): 1,000,000 Nibble 4 bits Byte: 8 bits Word: 16 bits Kword: 1,024 words Kb: 1,024 bits KB: 1,024 bytes ...

Page 8

... J3 family. These new security features prevent altering of code through different protection schemes that can be implemented, based on user requirements. The Numonyx™ Embedded Flash Memory ( device optimized architecture and interface dramatically increases read performance by supporting page-mode reads. This read mode is ideal for non-clock memory systems. ...

Page 9

... Numonyx™ Embedded Flash Memory ( Blocks are selectively and individually lockable in-system. Individual block locking uses block lock-bits to lock and unlock blocks. Block lock-bits gate block erase and program operations. Lock-bit configuration operations set and clear lock-bits (using the Set Block Lock-Bit and Clear Block Lock-Bits commands). The Status Register indicates when the WSM’ ...

Page 10

... A Y-Decoder 0 21 64-Mbit Input Buffer 0 22 128-Mbit Address Latch X-Decoder Address Counter Figure 2: Numonyx™ Embedded Flash Memory ( Memory Block Diagram (256 Mbit) CE# A[23-A0] Datasheet Output Input Buffer Buffer Query Identifier Register Status Register Multiplexer ...

Page 11

... Numonyx™ Embedded Flash Memory ( 2.2 Memory Map Figure 3: Numonyx™ Embedded Flash Memory ( Memory Map A[24-0]: 256 Mbit A [23-0]:128 Mbit A [22-0]: 64 Mbit A [21-0]: 32 Mbit 1FFFFFF 128-Kbyte Block 1FE0000 0FFFFFF 128-Kbyte Block 0FE0000 07FFFFF 128-Kbyte Block 07E0000 03FFFFF 128-Kbyte Block 03E0000 ...

Page 12

... Package Height Standoff Package Body Thickness Lead Width Lead Thickness Package Body Length Package Body Width Lead Pitch Terminal Dimension Lead Tip Length Datasheet 12 Numonyx™ Embedded Flash Memory ( See Note 2 See Notes 1 and Detail ...

Page 13

... Numonyx™ Embedded Flash Memory ( Table 1: 56-Lead TSOP Dimension Table Parameter Symbol Lead Count Lead Tip Angle Seating Plane Coplanarity Lead to Package Offset 3.2 Easy BGA Package (32, 64, 128 and 256 Mbit) Figure 5: Easy BGA Mechanical Specifications Ball A1 Corner ...

Page 14

... Corner to Ball A1 Distance Along D (32/64/128 Mb) Corner to Ball A1 Distance Along E (32/64/128 Mb) Notes: 1. For Daisy Chain Evaluation Unit information refer to the Numonyx Flash Memory Packaging Technology Web page at: www.Numonyx.com/design/packtech/index.htm 2. For Packaging Shipping Media information refer to the Numonyx Flash Memory Packaging Technology Web page at: www.Numonyx.com/design/packtech/index.htm Datasheet 14 Numonyx™ ...

Page 15

... Ballouts and Signal Descriptions Numonyx™ Embedded Flash Memory ( available in two package types. All densities of the Numonyx™ Embedded Flash Memory ( are supported on both 64-ball Easy BGA and 56-lead Thin Small Outline Package (TSOP) packages, except the 256 Mbit density that is available only in Easy BGA. ...

Page 16

... A23 A0 D2 VCCQ H NC RFU VCC VSS Intel® Embedded Flash Memory ( Easy BGA Top View- Ball side down 256 Mbit Datasheet 16 Numonyx™ Embedded Flash Memory ( A13 VCC A18 A22 A22 A18 A14 RFU A19 ...

Page 17

... A23 exists on 128-Mbit densities. On 32- and 64-Mbit densities this signal is a no-connect (NC) 4.3 Signal Descriptions Table 3 lists the active signals used on Numonyx™ Embedded Flash Memory ( and provides a description of each. Table 3: Signal Descriptions for Numonyx™ Embedded Flash Memory ( (Sheet 1 ...

Page 18

... GND Supply Ground: Ground reference for device logic voltages. Connect to system ground. NC — No Connect: Lead is not internally connected; it may be driven or floated. Reserved for Future Use: Balls designated as RFU are reserved by Numonyx for future device RFU — functionality and enhancement. Datasheet 18 Numonyx™ Embedded Flash Memory ( Name and Function ≤ ...

Page 19

... Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage. These are stress ratings only. NOTICE: This document contains information available at the time of its release. The specifications are subject to change without notice. Verify with your local Numonyx sales office that you have the latest datasheet before finalizing a design. Table 4: ...

Page 20

... Waveform for Reset Operation” on page 29 timings. Datasheet 20 Power-UpSequence 1st † 1st Sequencing not † required † 2nd for detailed information regarding reset Numonyx™ Embedded Flash Memory ( Power-Down Sequence 3rd 2nd † 2nd Sequencing not 2nd required † 1st 1st 1st Figure 16, “AC November 2007 † ...

Page 21

... CCES Current Notes: 1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and speeds). Contact Numonyx’s Application Support Hotline or your local sales office for information about typical specifications. 2. Includes STS. 3. CMOS inputs are either V ± ...

Page 22

... LKO 5. Includes all operational modes of the device including standby and power-up sequences 6. Input/Output signals can undershoot to -1.0v referenced to V duration of 2ns or less, the V CCQ 6.3 Capacitance Table 9: Numonyx™ Embedded Flash Memory ( Capacitance Symbol C Input Capacitance IN C Output Capacitance OUT Notes: 1. sampled. not 100% tested. ...

Page 23

... Numonyx™ Embedded Flash Memory ( 7.0 AC Characteristics Timing symbols used in the timing diagrams within this document conform to the following convention: Figure 9: Timing Signal Naming Convention Source Signal Source State Figure 10: Timing Signal Name Decoder Signal Address A Data - Read Q Data - Write ...

Page 24

... Figure 17, “AC Input/Output Reference Waveform” on page 30 4. See Equivalent Testing Load Circuit” on page 30 5. Sampled, not 100% tested. 6. For devices configured to standard word/byte read mode, R15 (t Datasheet 24 Numonyx™ Embedded Flash Memory ( (3) = 2.7 V–3.6 V and V CC Density 32 Mbit 64 Mbit 128 Mbit 256 Mbit ...

Page 25

... Numonyx™ Embedded Flash Memory ( Figure 11: Single Word Asynchronous Read Waveform Address [A] CEx [E] OE# [G] WE# [ Data [D/Q] R11 BYTE#[F] R5 RP# [P] Notes low is defined as the last edge of CE0, CE1, or CE2 that enables the device CE0, CE1, or CE2 that disables the device. ...

Page 26

... BYTE# Notes low is defined as the last edge of CE0, CE1, or CE2 that enables the device CE0, CE1, or CE2 that disables the device this diagram, BYTE# is asserted high Datasheet 26 Numonyx™ Embedded Flash Memory ( R10 R7 R15 1 ...

Page 27

... Numonyx™ Embedded Flash Memory ( 7.2 Write Specifications Table 11: Write Operations # Symbol RP# High Recovery to WE# (CE PHWL PHEL (WE#) Low to WE# (CE ELWL WLEL Write Pulse Width Data Setup to WE# (CE DVWH DVEH Address Setup to WE# (CE AVWH ...

Page 28

... ADDRESS [A] CEx (WE#) [E (W)] WE# (CEx) [W (E)] OE# [G] DATA [D/Q] STS[R] W1 RP# [P] VPEN [V] Figure 15: Asynchronous Write to Read Waveform Address [A] CE# [E] WE# [W] OE# [G] Data [D/Q] W1 RST #/ RP# [P] VPEN [V] Datasheet 28 Numonyx™ Embedded Flash Memory ( W11 W11 ...

Page 29

... Numonyx™ Embedded Flash Memory ( 7.3 Program, Erase, Block-Lock Specifications Table 12: Configuration Performance # Symbol Write Buffer Byte Program Time W16 (Time to Program 32 bytes/16 words) t WHQV3 W16 Byte Program Time (Using Word/Byte Program Command) t EHQV3 Block Program Time (Using Write to Buffer Command) ...

Page 30

... Figure 19: Test Configuration Test Configuration CCQ CCQMIN Datasheet 30 Numonyx™ Embedded Flash Memory ( Parameter , this specification is not applicable) CC Test Points for a Logic "1" and 0.0 V for a Logic "0." Input timing begins, and output timing ends, at Device Under Test ...

Page 31

... Numonyx™ Embedded Flash Memory ( 8.0 Bus Interface This section provides an overview of Bus operations. Basically, there are three operations you can do with flash memory: Read, Program (Write), and Erase.The on-chip Write State Machine (WSM) manages all erase and program algorithms. The system CPU provides control of all in-system read, write, and erase operations through the system bus ...

Page 32

... WE# and RP# must be de-asserted. 8.1.1 Asynchronous Page Mode Read There are two Asynchronous Page mode configurations available on Numonyx™ Embedded Flash Memory (J3 v. D), depending on the system design requirements: • Four-Word Page mode: This is the default mode on power-up or reset. Array data can be sensed up to four words (8 Bytes time. • ...

Page 33

... Numonyx™ Embedded Flash Memory ( Note: For forward compatibility reasons, if the 8-word Asynchronous Page mode is used on Numonyx™ Embedded Flash Memory (J3 v. D), a Clear Status Register command must be executed after issuing the Set Enhanced Configuration Register command. See Table 17 for further details. ...

Page 34

... Flash commands fall into two categories: Basic Commands and Extended Commands. Basic commands are recognized by all Numonyx Flash devices, and are used to perform common flash operations such as selecting the read mode, programming the array, or erasing blocks. ...

Page 35

... Numonyx™ Embedded Flash Memory ( Table 18: Command Bus Operations Command Program Enhanced Configuration Register Program OTP Register Clear Status Register Program STS Configuration Register Read Array Read Status Register Read Identifier Codes (Read Device Information) CFI Query Word/Byte Program Buffered Program ...

Page 36

... Erase Error Command Sequence Program Error 4 Error 3 Error 2 Program Suspend Status 1 Block-Locked Error 0 Datasheet 36 Numonyx™ Embedded Flash Memory ( 47. PEN Program/ Program Program Erase Suspend Error Voltage Status Error Description 0 = Device is busy; SR[6:] are invalid (Not driven Device is ready; SR[6:0] are valid. ...

Page 37

... Numonyx™ Embedded Flash Memory ( 9.1.1 Clearing the Status Register The Status Register (SR) contain status and error bits which are set by the device. SR status bits are cleared by the device, however SR error bits are cleared by issuing the Clear Status Register command. Resetting the device also clears the Status Register. ...

Page 38

... All programming operations require the addressed block to be unlocked, and a valid VPEN voltage applied throughout the programming operation. Otherwise, the programming operation will abort, setting the appropriate Status Register error bit(s). Datasheet 38 Numonyx™ Embedded Flash Memory ( November 2007 308551-05 ...

Page 39

... Numonyx™ Embedded Flash Memory ( The following sections describe each programming method. 9.3.1 Single-Word/Byte Programming Array programming is performed by first issuing the Single-Word/Byte Program command. This is followed by writing the desired data at the desired array address. The read mode of the device is automatically changed to Read Status Register mode, which remains in effect until another read-mode command is issued ...

Page 40

... Valid array data is output only after the block-erase operation has finished. Datasheet 40 Numonyx™ Embedded Flash Memory ( Operations”). Erasing is performed on a block basis - an Table 22, “Block-Erase Command Bus-Cycle” on page 40 Setup Write Cycle ...

Page 41

... Numonyx™ Embedded Flash Memory ( Standby power levels are not be realized until the block-erase operation has finished. Also, asserting RP# aborts the block-erase operation, and array contents at the addressed location are indeterminate. The addressed block should be erased before programming within the block is attempted. ...

Page 42

... For these configurations, bit 0 controls Erase Complete interrupt pulse, and bit 1 controls Program Complete interrupt pulse. Supplying the 0x00 configuration code with the Configuration command resets the STS signal to the default RY/BY# level mode. Datasheet 42 Numonyx™ Embedded Flash Memory ( Program Suspend Not Allowed Allowed Not Allowed ...

Page 43

... Normal Block Locking Numonyx™ Embedded Flash Memory ( has the unique capability of Flexible Block Locking (locked blocks remain locked upon reset or power cycle): All blocks are unlocked at the factory. Blocks can be locked individually by issuing the Set Block Lock Bit command sequence to any address within a block ...

Page 44

... Configurable Block Locking One of the unique new features on the Numonyx™ Embedded Flash Memory (J3 v. D), non-existent on the previous generations of this product family, is the ability to protect and/or secure the user’s system by offering multiple level of securities: Non-Volatile Temporary ...

Page 45

... The user-programmable segment of the Protection Register is lockable by programming Bit 1 of the Protection Lock Register (PLR Bit 0 of this location is programmed the Numonyx factory to protect the unique device number. Bit 1 is set using the Protection Program command to program “0xFFFD” to the PLR. After these bits have been programmed, no further changes can be made to the values stored in the Protection Register ...

Page 46

... VPP or VPEN, blocks within the main array cannot be altered – attempts to program or erase blocks will fail resulting in the setting of the appropriate error bit in the Status Register. By holding VPP or VPEN low, absolute write protection of all blocks in the array can be achieved. Datasheet 46 Numonyx™ Embedded Flash Memory ( ...

Page 47

... Numonyx™ Embedded Flash Memory ( 10.0 Device Command Codes The list of all applicable commands are included here one more time for the convenience. Table 30: Command Bus Operations for Numonyx™ Embedded Flash Memory ( Command Program Enhanced Configuration Register Program OTP Register Clear Status Register ...

Page 48

... Device ID Codes Table 31: Read Identifier Codes Code Device Code Datasheet 48 Numonyx™ Embedded Flash Memory ( Address 32-Mbit 00001 64-Mbit 00001 128-Mbit 00001 256- Mbit 00001 Data 0016 0017 0018 001D November 2007 308551-05 ...

Page 49

... Numonyx™ Embedded Flash Memory ( 12.0 Flow Charts Figure 21: Write to Buffer Flowchart November 2007 308551-05 Start Setup - Write 0xE8 - Block Address Check Buffer Status - Perform read operation - Read Ready Status on signal SR7 No SR7 = 1? Yes Word Count - Address = block address - Data = word count minus 1 ...

Page 50

... See Suspend/Resume Flowchart SR5 = '1' SR4 = ' Error Erase Failure Y es Error SR4 = '1' Program Failure Error SR3 = '1' V < V PEN PENLK Error SR1 = '1' Block Locked No End Numonyx™ Embedded Flash Memory ( Error Command Sequence November 2007 308551-05 ...

Page 51

... Numonyx™ Embedded Flash Memory ( Figure 23: Byte/Word Program Flowchart Start Write 40H, Address Write Data and Address Read Status Register 0 SR Full Status Check if Desired Byte/Word Program Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above) 1 SR.3 = Voltage Range Error ...

Page 52

... Start Write B0H Read Status Register SR SR Write FFH Read Data Array Done Reading Yes Write D0H Programming Resumed Datasheet 52 Numonyx™ Embedded Flash Memory ( Bus Operation Write Read Standby Standby 0 Write Read 0 Programming Completed Write No Write FFH Read Array Data ...

Page 53

... Numonyx™ Embedded Flash Memory ( Figure 25: Block Erase Flowchart Start Issue Single Block Erase Command 20H, Block Address Write Confirm D0H Block Address Read Status Register 0 SR Full Status Check if Desired Erase Flash Block(s) Complete November 2007 308551-05 Bus Operation ...

Page 54

... Read Status Register SR SR Read Read or Program? Read Array No Data Done? Yes Write D0H Block Erase Resumed Datasheet 54 Numonyx™ Embedded Flash Memory ( Bus Operation Write Read Standby Standby 0 Write 0 Block Erase Completed Program Program Loop Write FFH Read Array Data ...

Page 55

... Numonyx™ Embedded Flash Memory ( Figure 27: Set Block Lock-Bit Flowchart Start Write 60H, Block Address Write 01H, Block Address Read Status Register 0 SR Full Status Check if Desired Set Lock-Bit Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above ...

Page 56

... Data (See Above SR.4 SR Clear Block Lock-Bits Successful Datasheet 56 Numonyx™ Embedded Flash Memory ( Bus Operation Write Write Read Standby Write FFH after the clear lock-bits operation to place device in read array mode. Bus Operation Standby Voltage Range Error Standby ...

Page 57

... Numonyx™ Embedded Flash Memory ( Figure 29: Protection Register Programming Flowchart Start Write C0H (Protection Reg. Program Setup) Write Protect. Register Address/Data Read Status Register No SR Yes Full Status Check if Desired Program Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above ...

Page 58

... Query start location in Type/ maximum device bus Mode width addresses x16 device 10h x16 mode x16 device Datasheet 58 Numonyx™ Embedded Flash Memory ( Query data with maximum device bus width addressing Hex ASCII Hex Code Offset Value 10: 0051 “Q” ...

Page 59

... Numonyx™ Embedded Flash Memory ( Table 32: Summary of Query Structure Output as a Function of Device and Mode Device Query start location in Type/ maximum device bus Mode width addresses (1) x8 mode N/A Note: 1. The system must drive the lowest order addresses to access all the device's array data when the device is configured in x8 mode. Therefore, word addressing, where these lower addresses are not toggled by the system, is " ...

Page 60

... BA = Block Address beginning location (i.e., 02000h is block 2’s beginning location when the block size is 128 Kbyte). 3. Offset 15 defines “P” which points to the Primary Numonyx-Specific Extended Query Table. 13.3 Block Status Register The Block Status Register indicates whether an erase operation completed successfully or whether a given block is locked or can be accessed for flash program/erase operations ...

Page 61

... Numonyx™ Embedded Flash Memory ( 13.5 System Interface Information The following device information can optimize system interface software. Table 37: System Interface Information Offset Length V logic supply minimum program/erase voltage CC 1Bh 1 bits 0–3 BCD 100 mV bits 4–7 BCD volts V logic supply maximum program/erase voltage ...

Page 62

... Length P = 31h (Optional Flash Features and Commands) (P+0)h 3 Primary extended query table (P+1)h Unique ASCII string “PRI” (P+2)h (P+3)h 1 Major version number, ASCII (P+4)h 1 Minor version number, ASCII Datasheet 62 Numonyx™ Embedded Flash Memory ( Mbit 64 Mbit --16 --17 --02 --02 --00 --00 --05 --05 --00 --00 --01 --01 --1F --3F ...

Page 63

... Numonyx™ Embedded Flash Memory ( Table 40: Primary Vendor-Specific Extended Query (Sheet (1) Offset Length P = 31h (Optional Flash Features and Commands) Optional feature and command support (1=yes, 0=no) Undefined bits are “0.” If bit 31 is “1” then another 31 bit field of optional features follows at the end of the bit-30 field ...

Page 64

... Bits [27:10 Bits [30:28] = Memory type: • 000b = CSD Flash • 100b = LD Flash bit 31 = Another CFI link field immediately follows Datasheet 64 Numonyx™ Embedded Flash Memory ( Description (Optional Flash Features and Commands factory pre-programmed bytes n = user-programmable bytes Description (Optional Flash Features and Commands) ...

Page 65

... Numonyx™ Embedded Flash Memory ( Table 43: Additional CFI link for the lower die of the stacked device (256 Mb only) (1) Offset Length P = 31h (Optional Flash Features and Commands) CFI Link Quantity Subfield Definition Bits [3:0] = Quantity field (n such that n+1 equals quantity Bit 4 = Table & die relative location • ...

Page 66

... Call the Numonyx Literature Center at (800) 548-4725 to request Numonyx documentation. International customers should contact their local Numonyx or distribution sales office. 2. Visit the Numonyx home page 3. For the most current information on Numonyx™ Embedded Flash Memory (J3 v. D), visit developer.Numonyx.com/design/flash/isf. Datasheet 66 Numonyx™ Embedded Flash Memory ( Document/Tool http://www ...

Page 67

... Numonyx™ Embedded Flash Memory ( Appendix B Ordering Information Figure 30: Decoder for Discrete Family (32, 64 and 128 Mbit Package TE= 56-Lead TSOP (J3C, 803 Pb-Free 56-TSOP RC = 64-Ball Easy BGA PC = 64-Ball Pb-Free Easy BGA Product line designator For all Intel® ...

Page 68

... Table 45: Valid Line Item Combinations for SCSP Family 256-Mbit RC48F3300J0Z00S PC48F3300J0Z00S Datasheet Numonyx™ Embedded Flash Memory ( Device Details Third Generation – Character S thru Z Ballout Designator 0 = Discrete ballout Parameter, Mux Configuration boot Configuration I/O Voltage, CE# Configuration ...

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