ir51hd224 International Rectifier Corp., ir51hd224 Datasheet

ir51hd224

Manufacturer Part Number

ir51hd224

Description

Self-oscillating Half Bridge

Manufacturer

International Rectifier Corp.

Datasheet

1.IR51HD224.pdf (7 pages)

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Bonase Electronics (HK) Co., Limited

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Features

Description

The IR51H(D)XXX are complete high voltage, high speed, self-

oscillating half-bridge circuits. Proprietary HVIC and latch im-

mune CMOS technologies, along with the HEXFET ® power

MOSFET technology, enable ruggedized single package construc-

tion. The front-end features a programmable oscillator which func-

tions similar to the CMOS 555 timer. The supply to the control

circuit has a zener clamp to simplify offline operation. The output

features two HEXFETs in a half-bridge configuration with an in-

ternally set deadtime designed for minimum cross-conduction in

the half-bridge. Propagation delays for the high and low side

Typical Connection

Accurate timing control for both Power MOSFET

Half-bridge output is out of phase with R

Micropower startup

Output Power MOSFETs in half-bridge configuration

High side gate drive designed for bootstrap operation

Bootstrap diode integrated into package (HD type)

Internal oscillator with programmable frequency

15.6V Zener clamped Vcc for offline operation

Matched delay to get 50% duty cycle

Matched deadtime of 1.2us

C O M

VIN

1 4

D C B u s

. × (

) ×

IR51H(D)XXX

recommend the IR53H(D)420-P)

V c c

C O M

(NOTE: For new designs, we

SELF-OSCILLATING HALF BRIDGE

D 1

V O

Preliminary Data Sheet No. PD60083- K

Product Summary

Package

V IN (max) 250V (IR51H(D)224)

Duty Cycle

Deadtime

R ds(on)

P D (T A = 25

power MOSFETs are matched to simplify

use in 50% duty cycle applications. The

device can operate up to 500 volts.

External

Fast recovery diode D1 is

not required for HD type

L O A D

TO,

400V (IR51H(D)320)

500V (IR51H(D)420)

C )

1.1 (IR51H(D)224)

3.0 (IR51H(D)320)

3.6 (IR51H(D)420)

IR51H(D)224

IR51H(D)320

IR51H(D)420

without leads 5 and 8

9-Lead SIP

50%

1.2 s

2.0W

Related parts for ir51hd224

ir51hd224 Summary of contents

Page 1

Features Output Power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation Bootstrap diode integrated into package (HD type) Accurate timing control for both Power MOSFET Matched delay to get 50% duty cycle Matched deadtime of 1.2us ...

Page 2

IR51H(D)224 IR51H(D)320 IR51H(D)420 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance ...

Page 3

Recommended Operating Conditions The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used within the recommended conditions. Symbol Definition V High side floating supply absolute voltage B V High voltage supply IN ...

Page 4

IR51H(D)224 IR51H(D)320 IR51H(D)420 Static Electrical Characteristics 12V unless otherwise specified. BIAS CC B Symbol Definition V V supply undervoltage positive going CCUV+ CC threshold V V supply undervoltage ...

Page 5

Functional Block Diagram ...

Page 6

IR51H(D)224 IR51H(D)320 IR51H(D)420 Lead Assignments (NOTE: For new designs, we recommend the IR53H(D)420- 9-Lead SIP without Leads 5 and ...

Page 7

Case outline NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling Dimension: INCH 3. Dimensions are shown in millimeters (inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 http://www.irf.com/ (NOTE: For new designs, we recommend ...

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