fdc699p-f077 Fairchild Semiconductor, fdc699p-f077 Datasheet - Page 4

• Manufacturer Part Number: fdc699p-f077
• Description: Fdc699p P-channel 2.5v Powertrench? Mosfet
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
40
30
20
10
0
40
30
20
10
1.4
1.3
1.2
1.1
0.9
0.8
0
1
0
0.5
-50
Figure 1. On-Region Characteristics.
V
GS
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
V
-3.5V
= -4.5V
DS
V
= -5V
GS
I
-25
D
= -7A
= -4.5V
0.5
1
-V
-V
withTemperature.
T
GS
DS
0
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
-3.0V
T
A
= 125
1
25
1.5
o
-2.5V
C
-55
50
o
C
1.5
2
75
25
-2.0V
o
C
100
o
C)
2
2.5
125
2.5
3
150
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.045
0.035
0.025
0.015
0.01
100
0.05
0.04
0.03
0.02
0.01
0.1
10
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1
with Source Current and Temperature.
2
1
0
1
0
V
Drain Current and Gate Voltage.
V
GS
GS
= 0V
T
= -2.0V
A
= 25
Gate-to-Source Voltage.
0.2
-V
SD
o
T
C
, BODY DIODE FORWARD VOLTAGE (V)
A
-V
= 125
10
2
GS
, GATE TO SOURCE VOLTAGE (V)
-2.5V
0.4
o
-I
C
D
, DRAIN CURRENT (A)
-3.0V
25
o
C
0.6
20
3
T
-55
A
-3.5V
= 125
o
C
0.8
o
C
-4.0V
30
4
FDC699P Rev C2 (W)
I
D
1
= -3.5A
-4.5V
1.2
40
5