tc9496af TOSHIBA Semiconductor CORPORATION, tc9496af Datasheet - Page 41
tc9496af
Manufacturer Part Number
tc9496af
Description
1 Chip Audio Digital Signal Processor
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TC9496AF.pdf
(48 pages)
- Current page: 41 of 48
- Download datasheet (582Kb)
AC Characteristic
Maximum input signal level
Input impedance
S/(N + D) ratio
THD + N
Cross-talk
Dynamic range
Note 8: Input channels: LIN, RIN
Maximum input signal level
Input impedance
S/(N + D) ratio
THD + N
Cross-talk
Dynamic range
Note 9: Input channels: MIN
Note 10: Input channels: LIN, RIN, MIN
AD Converter (1): LIN, RIN pins
AD Converter (2): MIN pin
Characteristics
Characteristics
Symbol
Symbol
THD
CT
CT
S/N
S/N
S/N
THD
DR
DR
Z
CT
V
Z
V
inM
aM1
aM2
iM
in
aM
i
aM
a1
a2
a
aM
a
a
Circuit
Circuit
Test
Test
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
41
Input level that ADC output at
full-scale digital output
LIN, RIN pins
A-Weight,
X’tal: 36.864 MHz
CCIR-ARM,
X’tal: 36.864 MHz
20 kHz LPF,
X’tal: 36.864 MHz
20 kHz LPF,
X’tal: 36.864 MHz
A-Weight,
X’tal: 36.864 MHz
Input level that ADC output at
full-scale digital output
MIN pin
A-Weight,
X’tal: 36.864 MHz
20 kHz LPF,
X’tal: 36.864 MHz
X’tal: 36.864 MHz
LIN, RIN ® MIN
X’tal: 36.864 MHz
MIN ® LIN, RIN
A-Weight,
X’tal: 36.864 MHz
Test Condition
Test Condition
(Note 10)
(Note 10)
(Note 8)
(Note 8)
(Note 8)
(Note 8)
(Note 8)
(Note 8)
(Note 8)
(Note 9)
(Note 9)
(Note 9)
(Note 9)
(Note 9)
1.18
Min
Min
¾
88
85
¾
¾
85
¾
¾
70
¾
¾
¾
70
Typ.
1.27
Typ.
-80
-90
-62
-76
-90
1.1
27
96
93
92
80
80
1
TC9496AF
2002-01-11
1.15
Max
Max
-72
-83
-53
-60
-83
¾
¾
¾
¾
¾
¾
¾
¾
Vrms
Vrms
Unit
Unit
kW
kW
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Related parts for tc9496af
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet: