iris-f6426s International Rectifier Corp., iris-f6426s Datasheet - Page 2
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iris-f6426s
Manufacturer Part Number
iris-f6426s
Description
Integrated Switcher
Manufacturer
International Rectifier Corp.
Datasheet
1.IRIS-F6426S.pdf
(7 pages)
Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Recommended operating conditions
For the quasi resonant signal inputted to O.C.P/F.B Pin at the time
of quasi resonant operation, the signal shall be wider than T
IRIS-F6426S
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
Symbol
I
I
DMAX
Dpeak
Tstg
E
Top
Vin
Vth
P
P
Tch
T
AS
D1
D2
F
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 5 due to patterning, the maximum switching current decreases as shown by V
Accordingly please use this device within the decrease value, referring to the derating curve of the
maximum switching current.
Drain Current
Maximum switching current *5
Single pulse avalanche energy *2
Input voltage for control part
O.C.P/F.B Pin voltage
Power dissipation for MOSFET *3
Power dissipation for control part
Internal frame temperature
in operation
Operating ambient temperature
Storage temperature
Channel temperature
Time for input of quasi resonant signals
Definition
(Control IC) *4
*1
Terminals Max. Ratings
3-2
3-2
3-2
4-5
1-5
3-2
4-5
th(2)
-
-
-
-
-20 ~ +125
-20 ~ +125
-40 ~ +125
0.49
327
150
2.8
16
16
35
52
6
V
O.C.P/F.B
Fig.1
0V
Units
mJ
℃
℃
℃
℃
W
W
W
A
A
V
V
Refer to recommended
operating temperature
With infintite heatsink
Without heatsink
Ta=-20~+125 ℃
V
Single Pulse
Single Pulse
Specified by
I
V
L peak
Vin × Iin
2-5
2-5
Note
=0.78V
=6.7A
Tth(2)≧1.0μsec
www.irf.com
2-5
Vth(2)
in Fig.1