si7872dp-t1 Vishay, si7872dp-t1 Datasheet - Page 6

• Manufacturer Part Number: si7872dp-t1
• Description: Dual N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Si7872DP
Vishay Siliconix
MOSFET CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
6
0.040
0.032
0.024
0.016
0.008
0.000
30
25
20
15
10
10
5
0
8
6
4
2
0
0
0
0
V
I
V
D
On-Resistance vs. Drain Current
DS
GS
5
= 7.5 A
2
V
5
= 15 V
DS
= 10 thru 4 V
Output Characteristics
V
- Drain-to-Source Voltage (V)
Q
GS
10
g
I
= 4.5 V
D
Gate Charge
- Total Gate Charge (nC)
4
10
- Drain Current (A)
3 V
15
6
15
20
V
GS
8
20
= 10 V
25
New Product
10
25
30
2000
1600
1200
800
400
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
5
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
0.5
C
GS
= 7.5 A
rss
5
= 10 V
V
GS
1.0
T
V
0
Transfer Characteristics
J
DS
- Junction Temperature
- Gate-to-Source Voltage (V)
10
T
- Drain-to-Source Voltage (V)
C
1.5
25
25 °C
Capacitance
= 125 °C
2.0
C
C
50
15
iss
oss
S-52555-Rev. B, 30-Mar-06
Document Number: 72035
2.5
75
- 55 °C
20
(°C)
100
3.0
25
125
3.5
150
4.0
30