adum6200 Analog Devices, Inc., adum6200 Datasheet - Page 7

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adum6200

Manufacturer Part Number
adum6200
Description
Dual-channel, 5 Kv Isolators With Integrated Dc-to-dc Converter Adum6200/adum6201/adum6202
Manufacturer
Analog Devices, Inc.
Datasheet

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Part Number
Manufacturer
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Manufacturer:
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Quantity:
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Table 13. Input and Output Characteristics
Parameter
DC SPECIFICATIONS
AC SPECIFICATIONS
1
PACKAGE CHARACTERISTICS
Table 14.
Parameter
RESISTANCE AND CAPACITANCE
THERMAL SHUTDOWN
1
2
3
|CM| is the maximum common-mode voltage slew rate that can be sustained while maintaining V
input. The common-mode voltage slew rates apply to both rising and falling common-mode voltage edges.
This device is considered a 2-terminal device; Pin 1 through Pin 8 are shorted together, and Pin 9 through Pin 16 are shorted together.
Input capacitance is from any input data pin to ground.
Refer to the
Logic High Input Threshold
Logic Low Input Threshold
Logic High Output Voltages
Logic Low Output Voltages
Undervoltage Lockout
Input Currents per Channel
Output Rise/Fall Time
Common-Mode Transient
Refresh Rate
Resistance (Input-to-Output)
Capacitance (Input-to-Output)
Input Capacitance
IC Junction-to-Ambient Thermal
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
Positive-Going Threshold
Negative-Going Threshold
Hysteresis
Immunity
Resistance
Thermal Analysis
1
2
section for thermal model definitions.
1
1
Symbol
V
V
V
V
UVLO
V
V
V
I
t
|CM|
f
I
R
r
IH
IL
OH
OL
UV+
UV−
UVH
/t
F
Symbol
R
C
C
θ
TS
TS
I-O
JA
I-O
I
SD
SD-HYS
Min
0.7 × V
0.7 × V
V
V
V
V
−20
25
DD1
ISO
DD1
ISO
− 0.3
− 0.5
− 0.3 or
− 0.5 or
Min
ISO
DD1
or
Rev. 0 | Page 7 of 24
Typ
V
V
V
0.0
0.0
2.7
2.4
0.3
+0.01
2.5
35
1.0
Typ
10
2.2
4.0
45
150
20
DD1
DD1
ISO
12
− 0.2 or
− 0.2
or V
ISO
Max
O
> 0.7 × V
Max
0.3 × V
0.3 × V
0.1
0.4
+20
DD1
ADuM6200/ADuM6201/ADuM6202
or 0.7 × V
Unit
Ω
pF
pF
°C/W
°C
°C
ISO
DD1
or
ISO
for a high input or V
Unit
V
V
V
V
ns
kV/μs
Mbps
V
V
V
V
V
μA
Test Conditions/Comments
f = 1 MHz
Thermocouple is located at the center of
the package underside; test conducted
on a 4-layer board with thin traces
T
J
rising
Test Conditions/ Comments
I
I
I
I
V
0 V ≤ V
10% to 90%
V
transient magnitude = 800 V
Ox
Ox
Ox
Ox
DD1
Ix
= −20 μA, V
= −4 mA, V
= 20 μA, V
= 4 mA, V
= V
O
, V
< 0.3 × V
DD1
ISO
Ix
≤ V
supplies
or V
DD1
DDx
Ix
Ix
ISO
or 0.3 × V
Ix
= V
Ix
= V
= V
, V
= V
IxL
IxL
CM
IxH
IxH
= 1000 V,
ISO
for a low
3

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