m52d64164a Elite Semiconductor Memory Technology Inc., m52d64164a Datasheet - Page 35
m52d64164a
Manufacturer Part Number
m52d64164a
Description
1m X 16 Bit X 4 Banks Mobile Synchronous Dram
Manufacturer
Elite Semiconductor Memory Technology Inc.
Datasheet
1.M52D64164A.pdf
(48 pages)
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ESMT
Page Write Cycle at Different Bank @ Burst Length = 4
*Note:
Elite Semiconductor Memory Technology Inc.
1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and the precharge banks must be the same.
Publication Date: Jul. 2009
Revision: 1.6
M52D64164A
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