m52s128324a Elite Semiconductor Memory Technology Inc., m52s128324a Datasheet - Page 4

• Manufacturer Part Number: m52s128324a
• Description: 1m X 32 Bit X 4 Banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
ABSOLUTE MAXIMUM RATINGS
Note :
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to V
Note:
Elite Semiconductor Memory Technology Inc.
DQM0~3
DQ0 ~ DQ31
V
V
N.C
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
DD
DDQ
/ V
/ V
PIN
SS
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
4. Dout is disabled , 0V
SSQ
Parameter
IH
IL
DD
(min) = -1.0V AC for pulse width
(max) = 3.0V AC for pulse width
Parameter
supply relative to V
Data Input / Output Mask
Data Input / Output
Power Supply / Ground
Data Output Power / Ground
No Connection
≤
V
IN
SS
NAME
≤
≤
V
Symbol
SS
DD
V
V
V
V
V
V
, V
I
DD
I
OUT
OL
OH
IL
OL
IH
IL
DDQ
, all other pins are not under test = 0V.
≤
V
≤
≤
DD
.
0.8xV
V
3ns acceptable.
3ns acceptable.
V
V
DDQ
Symbol
DD
Min
-0.3
IN
2.3
2.4
Makes data output Hi-Z, t
Blocks data input when DQM active.
Data inputs / outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide
improved noise immunity.
This pin is recommended to be left No Connection on the device.
-5
-5
T
, V
I
, V
P
STG
OS
-0.2
DDQ
D
OUT
DDQ
SS
= 0V, T
Typ
2.5
2.3
0
-
-
-
-
A
= 0 to 70 C
INPUT FUNCTION
SHZ
-55 ~ +150
-1.0 ~ 3.6
-1.0 ~ 3.6
V
Value
° )
DD
after the clock and masks the output.
Max
2.7
0.8
0.2
50
1
5
5
+0.3
-
Publication Date: Mar. 2009
Revision: 1.4
M52S128324A
Unit
μ
μ
V
V
V
V
V
A
A
Unit
mA
°
W
V
V
C
I
I
OH
OL
Note
= -2mA
= 2mA
1
2
3
4
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