k4h510438b-tuc/lb3 Samsung Semiconductor, Inc., k4h510438b-tuc/lb3 Datasheet - Page 22
k4h510438b-tuc/lb3
Manufacturer Part Number
k4h510438b-tuc/lb3
Description
512mb C-die Ddr Sdram Specification
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4H510438B-TUCLB3.pdf
(24 pages)
DDR SDRAM 512Mb B-die (x4, x8, x16)
Voltage
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
(V)
Typical
12.2
18.1
24.1
29.8
34.6
39.4
43.7
47.5
51.3
54.1
56.2
57.9
59.3
60.1
60.5
61.0
61.5
62.0
62.5
62.9
63.3
63.8
64.1
64.6
64.8
65.0
Low
6.0
Pulldown Current (mA)
Typical
100.9
101.9
102.8
103.8
104.6
105.4
High
13.5
20.1
26.6
33.0
39.1
44.2
49.8
55.2
60.3
65.2
69.9
74.2
78.4
82.3
85.9
89.1
92.2
95.3
97.2
99.1
6.8
Table 8. Full Strength Driver Characteristics
Minimum
13.8
18.4
23.0
27.7
32.2
36.8
39.6
42.6
44.8
46.2
47.1
47.4
47.7
48.0
48.4
48.9
49.1
49.4
49.6
49.8
49.9
50.0
50.2
50.4
50.5
4.6
9.2
Maximum
103.8
108.4
112.1
115.9
119.6
123.3
126.5
129.5
132.4
135.0
137.3
139.2
140.8
18.2
26.0
33.9
41.8
49.4
56.8
63.2
69.9
76.3
82.5
88.3
93.8
99.1
9.6
Typical
-12.2
-18.1
-24.0
-29.8
-34.3
-38.1
-41.1
-41.8
-46.0
-47.8
-49.2
-50.0
-50.5
-50.7
-51.0
-51.1
-51.3
-51.5
-51.6
-51.8
-52.0
-52.2
-52.3
-52.5
-52.7
-52.8
Low
-6.1
Typical
pullup Current (mA)
-101.3
-107.1
-112.4
-118.7
-124.0
-129.3
-134.6
-139.9
-145.2
-150.5
-155.3
-160.1
-14.5
-21.2
-27.7
-34.1
-40.5
-46.9
-53.1
-59.4
-65.5
-71.6
-77.6
-83.6
-89.7
-95.5
High
-7.6
Rev. 1.3 June. 2005
Minimum
DDR SDRAM
-13.8
-18.4
-23.0
-27.7
-32.2
-36.0
-38.2
-38.7
-39.0
-39.2
-39.4
-39.6
-39.9
-40.3
-40.4
-40.1
-40.2
-40.5
-40.6
-40.7
-40.8
-40.9
-41.0
-41.1
-41.2
-4.6
-9.2
Maximum
-100.6
-108.1
-123.0
-130.4
-136.7
-144.2
-150.5
-156.9
-163.2
-169.6
-176.0
-181.3
-187.6
-192.9
-198.2
-115.5
-10.0
-20.0
-29.8
-38.8
-46.8
-54.4
-61.8
-69.5
-77.3
-85.2
-93.0