k4s640832k Samsung Semiconductor, Inc., k4s640832k Datasheet - Page 9

• Manufacturer Part Number: k4s640832k
• Description: 64mb K-die Sdram
• Manufacturer: Samsung Semiconductor, Inc.

Notes :
DC CHARACTERISTICS (x16)
(Recommended operating condition unless otherwise noted, T
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
K4S640832K
K4S641632K
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S641632K-T(U)C
4. K4S641632K-T(U)L
5. Unless otherwise noted, input swing IeveI is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
N
N
P
P
CKE dV
CKE & CLK dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
CKE dV
CKE & CLK dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
t
CKE d0.2V
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
O
CCD
= 0 mA
= 0 mA
tt
tt
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS tV
(min), CLK dV
(min), CS tV
(min), CLK dV
IL
IL
Test Condition
(max), t
(max), t
A
CC
CC
= 0 to 70qC for x16 only)
IH
9 of 14
= 10ns
= 10ns
/V
IH
IH
IL
CC
CC
IL
IL
=V
(min), t
(min), t
(max), t
(max), t
= f
= f
DDQ
/V
CC
CC
CC
CC
SSQ)
= 10ns
= 10ns
= f
= f
C
L
110
110
Rev. 1.1 February 2006
Synchronous DRAM
50
80
Version
400
100
100
70
15
30
25
60
1
1
6
3
3
1
55
85
85
75
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4