tpc6902 TOSHIBA Semiconductor CORPORATION, tpc6902 Datasheet - Page 4

• Manufacturer Part Number: tpc6902
• Description: Toshiba Multi-chip Transistor Silicon Npn / Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

NPN
0.001
0.01
1.6
1.2
0.8
0.4
0.1
1.5
0.5
2
0
1
0.001
2
1
0
0
0
Base−emitter saturation voltage V
Common emitter
Single pulse test
30mA
Collector−emitter voltage V
V CE = 2 V
0.2
2
Collector current I
0.01
0.4
V
25°C
CE (sat)
4
I
I
C
C
10mA
Ta = 100°C
– V
– V
0.6
0.1
Common emitter Ta = 25°C
BE
Ta = 100°C
CE
– I
6
Single pulse test
C
C
0.8
CE
Common emitter
Single pulse test
(A)
−25°C
1
I C /I B = 30
8
BE
I B =1mA
(V)
−25°C
1
25°C
7mA
5mA
3mA
(V)
10
10
1.2
4
0.001
1000
0.01
0.01
100
0.1
0.1
0.0001
10
10
10
0.001
1
1
1
0.1
*: Single nonrepetitive pulse
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu
area: 645 mm
Single-device operation
These characteristic curves
must be derated linearly with
increase in temperature.
I C max (Continuous)
Common emitter
Single pulse test
I C max (Pulse)*
DC operation
Ta = 25°C
Ta = 25°C
V CE = 2 V
Collector−emitter voltage V
0.001
Ta = 100°C
Collector current I
Collector current I
0.01
2
25°C
).
25°C
Safe operation area
1
V
0.01
BE (sat)
h
FE
100°C
Ta = −25°C
0.1
– I
C
– I
0.1
C
C
C
−25°C
10
Common emitter
Single pulse test
(A)
(A)
1
CE
I C /I B = 30
1
2009-09-10
TPC6902
(V)
10μs*
100μs*
100ms*
10s*
10ms*
1ms*
10
10
100