tga8652-epu-sl TriQuint Semiconductor, tga8652-epu-sl Datasheet - Page 4

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tga8652-epu-sl

Manufacturer Part Number
tga8652-epu-sl
Description
Oc192 Modulator Driver, Smt Package
Manufacturer
TriQuint Semiconductor
Datasheet
TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
3/, 4/, 5/ ADDITIVE JITTER (p-p)
Notes:
1/ Verified at package level RF probe.
2/ Package Probe Bias: V
3/ Verified by design, TGA8652EPU assembled onto a demonstration board shown on page 7 then tested
4/ Vin = 2 V, Data Rate = 12.5 Gb/s, Vctrl and Vg are adjusted for maximum output.
5/ Computed using RSS Method where Jpp_additive = SQRT(Jpp_out
6/ Verified at die level on-wafer probe.
7/ Power Bias Die Probe: VDT=8 V, adjust Vg to achieve Id = 175 mA+/-5%, Vctrl = 1.5 V
NOTE
1/, 2/
1/, 2/
1/, 2/
6/, 7/
3/, 4/
3/, 4/
using the application circuit and bias procedure detailed on pages 8 and 9.
Note: At the die level, drain bias is applied thru the RF output port using a bias tee, voltage
is at the DC input to the bias tee.
SMALL SIGNAL BW
SATURATED POWER BW
SMALL-SIGNAL
GAIN MAGNITUDE
SMALL SIGNAL AGC RANGE
INPUT RETURN LOSS
MAGNITUDE
OUTPUT RETURN LOSS
MAGNITUDE
SATURATED OUTPUT
POWER
EYE AMPLITUDE
RISE TIME (10/90)
TEST
+
= 8 V, adjust Vg1 to achieve Id = 87 mA, Vctrl = +1 V
RF SPECIFICATIONS
(T
2, 4, 6, and 10 GHz
2, 4, 6, and 10 GHz
A
Vd (RFout) = 4.5 V
MEASUREMENT
Vd (RFout) = 6 V
Vd (RFout) = 5 V
Vd (RFout) = 7 V
= 25°C Nominal)
14 and 18 GHz
14 and 18 GHz
CONDITIONS
2, 4, 6, 8, and
2 and 4 GHz
Midband
10 GHz
14 GHz
16 GHz
10 GHz
6 GHz
MIN
8.0
7.0
6.0
5.5
15
13
13
10
10
10
25
9
8
8
2
- Jpp_in
VALUE
Product Data Sheet
TYP
12
16
16
15
14
13
13
15
10
10
10
10
25
5
2
)
June 14, 2005
MAX
UNITS
dBm
GHz
GHz
Vpp
dB
dB
dB
dB
ps
ps
4

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