SB1100-0.9 GSG [Gunter Seniconductor GmbH.], SB1100-0.9 Datasheet
SB1100-0.9
Manufacturer Part Number
SB1100-0.9
Description
Chips for Schottky Diodes
Manufacturer
GSG [Gunter Seniconductor GmbH.]
Datasheet
1.SB1100-0.9.pdf
(1 pages)
General Description:
Schottky Diode chips with Mo-barrier for switch mode power
rectifiers with the following features:
* Guard-ring for stress protection
* Extremely low forward voltage
* 125 ℃ ℃ ℃ ℃ operation junction temperature
* reverse avalanche behavior
Mechanical Data:
SB 1XX passivated Silicon Chip
Demension(mm)
Thickness:
Metallization:
Top ( Anode ) :
Bottom ( Cathode) : TiNiAg
Reverse Voltage (V):
Note: Other voltages, Vf & Top Metal AL are available
Chip Specification
Forward Current(A)
SB1100
SB120
SB140
Type
350 +- 20 m
0.9x0.9
23, 43, 100 V
Al Ag
1 A
0.9x0.9
0.9x0.9
0.9x0.9
size(mm)
Chip
Chips for Schottky Diodes
SB 1XX - 0.9
100 V
V
43 V
23V
R
(V)
VF(V)@25 C
400mV
500mV
730mV
at If=1A
I
RM
0,5mA
@V
0,5mA
0,5mA
at 25 C
RMM
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