ST10F271E STMICROELECTRONICS [STMicroelectronics], ST10F271E Datasheet - Page 26

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ST10F271E

Manufacturer Part Number
ST10F271E
Description
16-bit MCU with 128 Kbyte Flash memory and 8/12 Kbyte RAM
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Internal Flash memory
5
5.1
5.2
5.2.1
Note:
26/180
1
Internal Flash memory
Overview
The on-chip Flash is composed by one matrix module, 256 KBytes wide.
This module is on ST10 Internal bus, so it is called IFLASH
Figure 5.
The programming operations of the flash are managed by an embedded Flash
Program/Erase Controller (FPEC). The High Voltages needed for Program/Erase operations
are internally generated.
The Data bus is 32-bit wide for fetch accesses to IFLASH, while it is 16 bit wide for read
accesses to IFLASH. Read/write accesses to IFLASH Control Registers area are 16 bit
wide.
Functional description
Structure
The following table shows the Address space reserved to the Flash module.
Table 3.
The ST10F271 being based on the same silicon as the ST10F272, 256 KByte of Flash are
implemented on the device. The range 03’0000h - 04’FFFFh is not physically disabled even
if not available for use. Therefore this address range MUST be reserved by the application
IFLASH sectors
IFLASH reserved sector
Reserved IBUS area
Registers and Flash internal reserved area
Flash structure
Address space reserved to the Flash module
Description
Bank 0: 128 Kbyte
8 Kbyte Test-Flash
Program Memory
2)
1)
Flash Control
IFLASH
Registers
+
I-BUS Interface
0x00 0000 to 0x02 FFFF
0x03 0000 to 0x04 FFFF
0x05 0000 to 0x07 FFFF
0x08 0000 to 0x08 FFFF
Control Section
Program/Erase
Addresses
HV and Ref.
Generator
Controller
ST10F271B/ST10F271E
128 Kbyte
128 Kbyte
192 Kbyte
64 Kbyte
Size

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