k6f1616u6c Samsung Semiconductor, Inc., k6f1616u6c Datasheet - Page 4

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k6f1616u6c

Manufacturer Part Number
k6f1616u6c
Description
16mb 1m X 16 Bit Low Power Sram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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K6F1616U6C Family
PRODUCT LIST
1. LF : Lead Free Product
ABSOLUTE MAXIMUM RATINGS
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
FUNCTIONAL DESCRIPTION
1. X means donct care. (Must be low or high state)
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CS
X
X
H
L
L
L
L
L
L
L
L
1)
1)
1
CS
X
X
H
H
H
H
H
H
H
H
L
1)
1)
2
K6F1616U6C-FF55
K6F1616U6C-XF55
K6F1616U6C-FF70
K6F1616U6C-XF70
OE
X
X
X
X
X
X
H
H
L
L
L
Item
1)
1)
1)
1)
1)
1)
Part Name
WE
X
X
X
H
H
H
H
H
L
L
L
1)
1)
1)
Industrial Temperature Products(-40~85qC)
LB
X
X
X
H
H
H
L
L
L
L
L
1)
1)
1)
1)
UB
X
X
X
H
H
H
L
L
L
L
L
1)
1)
1)
V
Symbol
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
I/O
IN
Dout
Dout
T
Din
Din
V
,V
P
T
STG
CC
1~8
4
A
D
OUT
I/O
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
Din
Din
9~16
48-FBGA, 55ns, 3.0V
48-FBGA, 55ns, 3.0V, LF
48-FBGA, 70ns, 3.0V
48-FBGA, 70ns, 3.0V, LF
-0.2 to V
Lower Byte Read
Upper Byte Read
Lower Byte Write
Upper Byte Write
Output Disabled
Output Disabled
Deselected
Deselected
Deselected
Word Read
Word Write
CC
Function
-0.2 to 3.6
-65 to 150
Mode
-40 to 85
Ratings
+0.3V(Max. 3.6V)
1.0
CMOS SRAM
1)
1)
Standby
Standby
Standby
Power
Active
Active
Active
Active
Active
Active
Active
Active
Revision 2.0
May 2005
Unit
qC
qC
W
V
V

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