SI4925BDY-E3 VISHAY [Vishay Siliconix], SI4925BDY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4925BDY-E3
• Description: Dual P-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72001
S-50366—Rev. C, 28-Feb-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.08
0.06
0.04
0.02
0.00
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
D
V
DS
Source-Drain Diode Forward Voltage
GS
5
0.2
= 7.1 A
On-Resistance vs. Drain Current
= 15 V
= 4.5 V
V
SD
10
10
Q
0.4
g
− Source-to-Drain Voltage (V)
I
− Total Gate Charge (nC)
D
15
− Drain Current (A)
Gate Charge
T
0.6
J
= 150_C
20
20
0.8
25
T
J
1.0
= 25_C
30
30
V
GS
= 10 V
1.2
35
1.4
40
40
2500
2000
1500
1000
0.08
0.06
0.04
0.02
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
rss
−25
D
GS
= 7.1 A
I
D
= 10 V
2
6
= 3 A
T
V
V
0
C
J
GS
DS
C
− Junction Temperature (_C)
oss
iss
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
= 7.1 A
Vishay Siliconix
50
18
6
Si4925BDY
75
100
24
www.vishay.com
8
125
150
10
30
3