k9k1g08q0a Samsung Semiconductor, Inc., k9k1g08q0a Datasheet - Page 43
k9k1g08q0a
Manufacturer Part Number
k9k1g08q0a
Description
128m X 8 Bit / 64m X 16 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K9K1G08Q0A.pdf
(43 pages)
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WP
WE
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at V
circuit gets ready for any command sequences as shown in Figure 26. The two step command sequence for program/erase provides
additional software protection.
Figure 26. AC Waveforms for Power Transition
V
K9K1G08Q0A
K9K1G08U0A
CC
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
K9K1G16Q0A
K9K1G16U0A
IL
during power-up and power-down and recovery time of minimum 10 s is required before internal
10 s
High
43
FLASH MEMORY
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
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