RFD16N06SM INTERSIL [Intersil Corporation], RFD16N06SM Datasheet

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RFD16N06SM

Manufacturer Part Number
RFD16N06SM
Description
16A, 60V, 0.047 Ohm, N-Channel Power MOSFET
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RFD16N06SM
Manufacturer:
KA/INTRISII
Quantity:
12 500
September 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Features
• 16A, 60V
• r
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
• Related Literature
Ordering Information
NOTE: When ordering, use the entire part number. Add suffix 9A to ob-
tain the TO-252AA variant in tape and reel, i.e., RFD16N06SM9A.
Packaging
RFD16N06
RFD16N06SM
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
PART NUMBER
Components to PC Boards”
©
o
C Operating Temperature
Harris Corporation 1998
Semiconductor
= 0.047
(FLANGE)
DRAIN
TO-251AA
TO-252AA
JEDEC TO-251AA
PACKAGE
SOURCE
F16N06
F16N06
DRAIN
GATE
BRAND
5-1
Description
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives opti-
mum utilization of silicon, resulting in outstanding perfor-
mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Formerly developmental type TA09771.
Symbol
GATE
RFD16N06SM
SOURCE
N-Channel Power MOSFET
GATE
JEDEC TO-252AA
RFD16N06,
16A, 60V, 0.047 Ohm,
SOURCE
DRAIN
DRAIN
(FLANGE)
File Number
4087.1

Related parts for RFD16N06SM

RFD16N06SM Summary of contents

Page 1

... RFD16N06 TO-251AA RFD16N06SM TO-252AA NOTE: When ordering, use the entire part number. Add suffi ob- tain the TO-252AA variant in tape and reel, i.e., RFD16N06SM9A. Packaging JEDEC TO-251AA DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. ...

Page 2

... ISS OSS C RSS TO-251 and TO-252 JA SYMBOL TEST CONDITIONS 16A 16A, dI /dt = 100A 2%. 5-2 RFD16N06, RFD16N06SM Refer to Peak Current Curve 20 Refer to UIS Curve 72 0.48 -55 to 175 300 260 MIN TYP MAX ...

Page 3

... FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 100 10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 4. FORWARD BIAS SAFE OPERATING AREA RFD16N06, RFD16N06SM 125 150 175 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs ...

Page 4

... V , GATE TO SOURCE VOLTAGE (V) GS FIGURE 8. TRANSFER CHARACTERISTICS 2 250 A D 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE RFD16N06, RFD16N06SM (Continued + FIGURE 7. SATURATION CHARACTERISTICS 2.5 PULSE DURATION = 250 ...

Page 5

... Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. SWITCHING TIME TEST CIRCUIT RFD16N06, RFD16N06SM (Continued 0V 1MHz ISS RSS ...

Page 6

... Test Circuits and Waveforms g(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT RFD16N06, RFD16N06SM (Continued DUT 0 I g(REF) 0 FIGURE 19. GATE CHARGE WAVEFORM 5-6 Q g(TOT g(10 10V GS Q g(TH) = 20V GS ...

Page 7

... S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.56 VOFF= 5.56) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 5.56 VOFF= 0.56) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; authored by William J. Hepp and C. Frank Wheatley. RFD16N06, RFD16N06SM DPLCAP 5 10 RSCL1 ...

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