FQP10N60 TGS [Tiger Electronic Co.,Ltd], FQP10N60 Datasheet

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FQP10N60

Manufacturer Part Number
FQP10N60
Description
600V N-Channel MOSFET
Manufacturer
TGS [Tiger Electronic Co.,Ltd]
Datasheet

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DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s
proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supplies.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
600V N-Channel MOSFET
ELECTRICAL CHARACTERISTICS
Drain-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source Diode Forward Voltage
Parameter
Parameter
TIGER ELECTRONIC CO.,LTD
Symbol
V
V
T
I
P
I
T
DM
DSS
GSS
stg
D
D
j
Symbol
BV
R
V
( Ta = 25 C)
I
I
I
V
GSSR
GSSF
GS(th)
DS(on)
DSS
-55~150
SD
DSS
Value
±30
600
156
150
9.5
38
V
V
V
V
V
V
V
O
GS
DS
GS
GS
DS
GS
GS
O
Test Conditions
Unit
=600V, V
= V
= 0V, I
=30V, V
= -30V, V
= 10 V, I
= 0 V, I
o
o
W
V
A
A
V
C
C
GS
, I
D
S
D
=250μA
DS
D
= 9.5 A
GS
=250μA
DS
= 4.75 A
=0V
TO-220
=0V
=0V
Min.
600
2.0
Product specification
Typ.
0.6
FQP10N60
Max.
-100
0.73
100
1.0
4.0
1.4
Unit
uA
nA
nA
W
V
V
V

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