STW15NA50 STMICROELECTRONICS [STMicroelectronics], STW15NA50 Datasheet

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STW15NA50

Manufacturer Part Number
STW15NA50
Description
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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Price
Part Number:
STW15NA50
Manufacturer:
ST
Quantity:
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Part Number:
STW15NA50
Manufacturer:
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0
Part Number:
STW15NA50 D/C98
Manufacturer:
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Part Number:
STW15NA50 D/C99
Manufacturer:
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DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
R
and superior switching performance.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 1996
STH15NA50
STH15NA50FI
STW15NA50
Symbol
DS(on)
TYPICAL R
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW INTRINSIC CAPACITANCES
GATE GHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
V
D M
V
V
V
T
P
DG R
30V GATE TO SOURCE VOLTAGE RATING
I
I
T
ISO
D S
GS
stg
D
D
tot
TYPE
( )
j
and gate charge, unequalled ruggedness
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
500 V
500 V
500 V
V
= 0.33
DSS
Parameter
< 0.4
< 0.4
< 0.4
R
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
14.6 A
14.6 A
c
c
FAST POWER MOS TRANSISTOR
9.3 A
= 25
= 100
I
D
o
C
o
C
o
C
TO-218
STH/STW15NA50
INTERNAL SCHEMATIC DIAGRAM
14.6
58.4
1.52
190
9.2
1
-65 to 150
STH15NA50/FI
2
1
Value
500
500
150
3
2
30
STW15NA50
3
ISOWATT218
STH15NA50FI
TO-247
4000
58.4
0.64
9.3
5.5
80
1
W/
2
Unit
o
o
W
V
V
V
A
A
A
V
C
C
3
o
1/11
C

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STW15NA50 Summary of contents

Page 1

... Pulse width limited by safe operating area November 1996 FAST POWER MOS TRANSISTOR I D 14.6 A 9 TO-218 INTERNAL SCHEMATIC DIAGRAM STH/STW15NA50 = 14 100 C 9 190 1.52 STH15NA50/FI STW15NA50 TO-247 ISOWATT218 Value Unit STH15NA50FI 500 V 500 9.3 A 5 0.64 ...

Page 2

... STH15NA50/FI - STW15NA50 THERMAL DATA R Thermal Resistance Junction-case thj-cas e R Thermal Resistance Junction-ambient thj- amb R Thermal Resistance Case-sink t hc- sin k T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width limited Single Pulse Avalanche Energy ...

Page 3

... Reverse Recovery rr Time Q Reverse Recovery rr Charge I Reverse Recovery RRM Current ( ) Pulsed: Pulse duration = 300 s, duty cycle 1 Pulse width limited by safe operating area Safe Operating Areas For TO-218 and TO-247 STH15NA50/FI - STW15NA50 Test Conditions V = 225 7 4 (see test circuit, figure 3) ...

Page 4

... STH15NA50/FI - STW15NA50 Thermal Impedeance For TO-218 and TO-247 Derating Curve For TO-218 and TO-247 Output Characteristics 4/11 Thermal Impedance For ISOWATT218 Derating Curve For ISOWATT218 Transfer Characteristics ...

Page 5

... Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature STH15NA50/FI - STW15NA50 Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/11 ...

Page 6

... STH15NA50/FI - STW15NA50 Turn-on Current Slope Cross-over Time Accidental Overload Area 6/11 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time STH15NA50/FI - STW15NA50 Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test Circuit 7/11 ...

Page 8

... STH15NA50/FI - STW15NA50 TO-247 MECHANICAL DATA DIM. MIN. TYP 3.05 C 0.4 D 20.4 e 5.43 E 15.3 L 15.57 L1 3.7 Q 5.3 ØP 3.5 Q ø 8/11 mm MAX. MIN. 5.3 0.185 2.87 2.5 0.059 1.4 0.039 2.25 3.43 0.120 0.8 0.015 21.18 0.803 5.47 0.213 15.95 0.602 0.613 4.3 0.145 5.84 0.208 3.71 0.137 inch TYP. MAX. 0.208 0.113 0.098 0.055 0.088 0.135 ...

Page 9

... TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. TYP. A 4.7 C 1.17 D 2.5 E 0.5 F 1.1 G 10.8 H 14.7 L2 – 3. – Ø Ø STH15NA50/FI - STW15NA50 MAX. MIN. 4.9 0.185 1.37 0.046 0.78 0.019 1.3 0.043 11.1 0.425 15.2 0.578 16.2 – 4.15 0.155 12.2 – 4.1 0.157 inch TYP. MAX. 0.193 0.054 ...

Page 10

... STH15NA50/FI - STW15NA50 ISOWATT218 MECHANICAL DATA DIM. MIN. TYP. A 5.35 C 3.3 D 2.9 D1 1.88 E 0.45 F 1.05 G 10.8 H 15.8 L1 20.8 L2 19.1 L3 22.8 L4 40.5 L5 4.85 L6 20.25 M 3 10/11 mm MAX. MIN. 5.65 0.210 3.8 0.130 3.1 0.114 2.08 0.074 1 0.017 1.25 0.041 11.2 0.425 16.2 0.622 21.2 0.818 19.9 0.752 23.6 0.897 42.5 1.594 5.25 0.190 20.75 0.797 3.7 0.137 2.3 0.082 4 inch TYP ...

Page 11

... SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A STH15NA50/FI - STW15NA50 . 11/11 ...

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