bb504cds-tl-e Renesas Electronics Corporation., bb504cds-tl-e Datasheet - Page 6

• Manufacturer Part Number: bb504cds-tl-e
• Description: Mosfets Built In Biasing Circuit Mos Fet Ic Vhf&uhf Rf Amplifier
• Manufacturer: Renesas Electronics Corporation.

Rev.6.00 Aug 10, 2005 page 6 of 9
40
35
30
25
20
15
10
30
20
10
10
20
30
40
50
0
0
10
10
4
Drain Current vs. Gate Resistance
Gate2 to Source Voltage V
Power Gain vs. Gate Resistance
V
V
V
f = 900 MHz
V
R
f = 200MHz
V
V
Gate Resistance R
DS
G1
G2S
DS
DS
G
G2S
Gate Resistance R
20
20
Gate2 to Source Voltage
= 120 kΩ
= 5 V
= 5 V
= V
= V
= 4 V
= 4 V
Gain Reduction vs.
3
G1
G1
50
50
= 5 V
= 5 V
100 200
100 200
2
G
G
(kΩ)
(kΩ)
1
G2S
500 1000
500 1000
(V)
0
10
20
30
40
50
4
3
2
1
0
4
3
2
1
0
0
10
0
4
Gate2 to Source Voltage V
Gate2 to Source Voltage V
Noise Figure vs. Gate Resistance
V
R
f = 1 MHz
V
V
V
f = 900 MHz
V
R
f = 900MHz
DS
DS
G1
G2S
G
DS
G
20
Gate Resistance R
Gate2 to Source Voltage
= 120 kΩ
= 120 kΩ
= 5 V
Gate2 to Source Voltage
= VG1 = 5 V
= 5V
= V
= 4 V
Input Capacitance vs.
Gain Reduction vs.
1
3
G1
50
= 5 V
100 200
2
2
G
(kΩ)
3
1
G2S
500 1000
G2S
(V)
(V)
4
0