pbss9110t NXP Semiconductors, pbss9110t Datasheet - Page 3

• Manufacturer Part Number: pbss9110t
• Description: 100 V, 1 A Pnp Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm
2004 May 13
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
B
j
amb
stg
CBO
CEO
EBO
tot
100 V, 1 A
PNP low V
(1) 1 cm
(2) Standard footprint.
(mW)
P
tot
600
400
200
0
0
2
collector mounting pad.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
junction temperature
operating ambient temperature
storage temperature
Fig.2 Power derating curves.
40
CEsat (BISS)
(1)
(2)
PARAMETER
80
transistor
120
T
amb
001aaa811
( C)
160
open emitter
open base
open collector
limited by T
T
T
amb
amb
3
25 C; note 1
25 C; note 2
CONDITIONS
j(max)
65
65
2
MIN.
collector mounting pad.
300
480
150
+150
+150
PBSS9110T
Product specification
120
100
5
1
3
300
MAX.
V
V
V
A
A
mA
mW
mW
C
C
C
UNIT