CHA5093TCF/24 UMS [United Monolithic Semiconductors], CHA5093TCF/24 Datasheet - Page 2

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CHA5093TCF/24

Manufacturer Part Number
CHA5093TCF/24
Description
24-26GHz High Power Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
CHA5093TCF/24
Manufacturer:
UMS
Quantity:
1 400
CHA5093TCF
Schematic
Typical Bias Conditions
for an ambient Temperature of +25°C
All other pins are not used for this device.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd1,2,3
Vg1,2,3
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) 6V recommended for up to a max of 1dB gain compression.
(3) Duration < 1s.
(4) Upper temperature limit strongly dependent on motherboard design; ratings given for
Symbol
Ref. : DSCHA50932035 - 04-Feb.-02
Idd
Tstg
Vds
Vgs
Vdg
Pin
Ids
Ta
ideal thermal coupling
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Pin No.
2, 4 & 8
2,4 & 8
Drain bias voltage_small signal
Drain bias current_small signal
Gate bias voltage
Negative Drain Gate voltage (= Vds – Vgs)
Maximum peak input power overdrive (3)
Operating temperature range (4)
Storage temperature range
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
10
RF IN
RF IN
CHA5093TCF
CHA5093TCF
Drain bias voltage
First, second & third stages gate bias voltage
Total drain current
Parameter
Vg1,2,3
Vg1,2,3
Vd1,2
Vd1,2
2/6
Parameter
24-26GHz High Power Amplifier
Specifications subject to change without notice
Vd3
Vd3
Vd3
Vd3
-55 to +155
-40 to +70
-2 to +0.4
Values
1200
+12
6.0
+8
RF OUT
RF OUT
Values
-0.4
600
6
Unit
dBm
mA
°C
°C
V
V
V
Unit
mA
V
V

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