MC68HC908AP16CFA MOTOROLA [Motorola, Inc], MC68HC908AP16CFA Datasheet - Page 60
MC68HC908AP16CFA
Manufacturer Part Number
MC68HC908AP16CFA
Description
Microcontrollers
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
1.MC68HC908AP16CFA.pdf
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FLASH Memory
4.6 FLASH Program Operation
Data Sheet
60
NOTE:
NOTE:
Programming of the FLASH memory is done on a row basis. A row
consists of 64 consecutive bytes starting from addresses $XX00,
$XX40, $XX80 or $XXC0. Use the following procedure to program a row
of FLASH memory.
algorithm.)
This program sequence is repeated throughout the memory until all data
is programmed.
The time between each FLASH address change (step 6 to step 6), or the
time between the last FLASH addressed programmed to clearing the
PGM bit (step 6 to step 9), must not exceed the maximum programming
time, t
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
10. Wait for time, t
11. Clear the HVEN bit.
12. After time, t
1. Set the PGM bit. This configures the memory for program
2. Write any data to any FLASH location within the address range of
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write data to the FLASH location to be programmed.
7. Wait for time, t
8. Repeat steps 6 and 7 until all bytes within the row are
9. Clear the PGM bit.
Freescale Semiconductor, Inc.
For More Information On This Product,
operation and enables the latching of address and data for
programming.
the row to be programmed.
programmed.
again.
prog
max.
Go to: www.freescale.com
rcv
(Figure 4-3
(1 µs), the memory can be accessed in read mode
prog
nvh
nvs
pgs
(5 µs).
(20 µs to 40 µs).
(5 µs).
(10 µs).
shows a flowchart of the programming
MC68HC908AP Family — Rev. 2.5
MOTOROLA
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