HYB18M1G320BF QIMONDA [Qimonda AG], HYB18M1G320BF Datasheet - Page 9
HYB18M1G320BF
Manufacturer Part Number
HYB18M1G320BF
Description
DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM
Manufacturer
QIMONDA [Qimonda AG]
Datasheet
1.HYB18M1G320BF.pdf
(62 pages)
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Part Number:
HYB18M1G320BF-7.5
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1. At first, device core power (
2. After
3. Wait for 200µs while issuing NOP or DESELECT commands.
4. Issue a PRECHARGE ALL command, followed by NOP or DESELECT commands for at least
5. Issue two AUTO REFRESH commands, each followed by NOP or DESELECT commands for at least tRFC period.
6. Issue two MODE REGISTER SET commands for programming the Mode Register and Extended Mode Register, each
Following these steps, the DDR Mobile-RAM is ready for normal operation.
Rev.1.00, 2007-03
02022006-J7N7-GYFP
are driven from a single power converter output.
Assert and hold CKE to a HIGH level.
followed by NOP or DESELECT commands for at least tMRD period; the order in which both registers are programmed is
not important.
V
DD
and
V
DDQ
are stable and CKE is HIGH, apply stable clocks.
V
DD
) and device IO power (
V
DDQ
9
) must be brought up simultaneously. Typically
1-Gbit DDR Mobile-RAM
t
RP
HY[B/E]18M1G320BF
period.
V
DD
Data Sheet
and
V
DDQ
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