M5M5W816WG-10HI MITSUBISHI [Mitsubishi Electric Semiconductor], M5M5W816WG-10HI Datasheet - Page 8

• Manufacturer Part Number: M5M5W816WG-10HI
• Description: 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

1999.1.15
POWER DOWN CHARACTERISTICS
M5M5W816WG -85L, 10L, 85H, 10H
(2) TIMING REQUIREMENTS
(3) TIMING DIAGRAM
(1) ELECTRICAL CHARACTERISTICS
S1 control mode
S2 control mode
BC control mode
Symbol
Vcc
V
V
V
Icc
t
t
Symbol
rec (PD)
su (PD)
I (S1)
I (S2)
I (BC)
Vcc
Vcc
Vcc
(PD)
BC1
BC2
(PD)
S1
S2
Power down supply voltage
Byte control input BC1 & BC2
Chip select input S1
Chip select input S2
Power down set up time
Power down recovery time
Power down
supply current
Ver. 0.1
Parameter
0.7 x Vcc
0.7 x Vcc
Vcc-0.2V
Parameter
-85LI, 10LI, 85HI, 10HI
(1)
(2)
(3)
1.8V
1.0V
1.8V
1.0V
t
t
t
Vcc=1.0V
su (PD)
su (PD)
su (PD)
S2
BC1 and BC2 Vcc - 0.2V
other inputs = 0 ~ Vcc
other inputs = 0 ~ Vcc
other inputs = 0 ~ Vcc
S1
S1 0.2V, S2 Vcc - 0.2V
> =
< =
> =
0.2V,
Vcc(PD)
Vcc(PD) 1.8V
Vcc(PD)
Vcc(PD) 1.8V
Vcc - 0.2V,
> =
> =
1.8V
1.8V
1.8V
BC1 , BC2 Vcc-0.2V
MITSUBISHI ELECTRIC
Test conditions
S1 Vcc-0.2V
S2
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
Test conditions
>
=
0.2V
-H, -HI
-L, -LI
-HI
>
=
-LI
Note 2: Typical parameter of Icc(PD) indicates the value for the
1.8V
1.8V
1.8V
~ +25°C
~ +70°C
~ +40°C
~ +85°C
~ +85°C
~ +70°C
center of distribution at 1.0V, and not 100% tested.
t
t
t
rec (PD)
rec (PD)
rec (PD)
0.7xVcc
0.7xVcc
PRELIMINARY
Min
1.0
Min
0
5
-
-
-
-
-
-
Notice: This is not a final specification.
Some parametric limits are subject to change
Vcc(PD)
Vcc(PD)
Limits
Limits
Typ
0.02
0.05
Typ
0.7 x Vcc
0.7 x Vcc
0.7 x Vcc
-
-
-
-
Max
Max
0.5
0.2
7.5
15
MITSUBISHI LSIs
4
1
8
Units
Units
µA
ns
ms
V
V
V
8