M36DR432BD ST Microelectronics, M36DR432BD Datasheet - Page 28

• Manufacturer Part Number: M36DR432BD
• Description: 32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256Kb x16 SRAM / Multiple Memory Product
• Manufacturer: ST Microelectronics

M36DR432AD, M36DR432BD
Table 17. SRAM DC Characteristics
(T
Note: 1.
28/52
Symbol
A
I
V
V
V
= –40 to 85°C; V
I
DDS
I
V
I
DD
OZ
IX
OH
OL
2. V
IH
IL
I
and
DDES
IN
= V
I
Output High Voltage
DDR.
Output Low Voltage
Input Load Current
Input High Voltage
Input Low Voltage
and
IL
Output Leakage
Supply Current
V
or V
Parameter
If the device is read while in program suspend, current draw is the sum of
DD
I
Current
Current
DDWS
IH
Standby
DDF
are specified with device deselected. If device is read while in erase suspend, current draw is sum of
= V
DDS
I
OUT
= 1.65V to 2.2V)
ES
0V
= 0 mA, f = f
V
V
DDS
OUT
I
OUT
or V
0V
Test Condition
– 0.2V, V
V
V
V
CMOS levels
I
V
V
V
OH
I
= 0 mA, f = 0Hz
DDS
DDS
DDS
OL
DDS
DDS
DDS
IN
V
MAX
V
DDS,
= –0.1µA
= 0.1µA
IN
= 1.65V
= 1.65V
= 1.65V
= 2.2V
= 2.2V
= 2.2V
0.2V, f=0
= 1/t
IN
output disabled
V
DDS
RC
V
, CMOS levels
DDS
– 0.2V
I
DDWS
–0.5
Min
1.4
1.4
-1
-1
and
I
DDR
Typ
+1
±1
1
4
1
.
V
DDS
Max
0.4
0.2
+1
+1
10
7
5
+0.2V
Unit
I
mA
mA
µA
µA
µA
DDES
V
V
V
V