M36DR432BD ST Microelectronics, M36DR432BD Datasheet - Page 31

• Manufacturer Part Number: M36DR432BD
• Description: 32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256Kb x16 SRAM / Multiple Memory Product
• Manufacturer: ST Microelectronics

Table 18. Flash Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
t
t
t
t
t
t
Symbol
GHQZ
GLQX
GLQV
EHQZ
ELQX
ELQV
t
t
t
t
t
AVQV1
t
GHQX
AVQV
EHQX
AXQX
AVAV
2. GF may be delayed by up to t
3. To be characterized.
(1)
(2)
(1)
(2)
(1)
(1)
t
t
PAGE
t
t
t
t
t
t
Alt
ACC
t
t
t
t
OLZ
OH
OH
OH
RC
CE
OE
HZ
DF
LZ
Address Valid to Next
Address Valid
Address Valid to
Output Valid (Random)
Address Valid to
Output Valid (Page)
Chip Enable Low to
Output Transition
Chip Enable Low to
Output Valid
Output Enable Low to
Output Transition
Output Enable Low to
Output Valid
Chip Enable High to
Output Transition
Chip Enable High to
Output Hi-Z
Output Enable High to
Output Transition
Output Enable High to
Output Hi-Z
Address Transition to
Output Transition
Parameter
ELQV
- t
GLQV
after the falling edge of EF without increasing t
EF = V
EF = V
EF = V
EF = V
Test Condition
GF = V
GF = V
GF = V
GF = V
EF = V
EF = V
EF = V
EF = V
IL
IL
IL
IL
, GF = V
, GF = V
, GF = V
, GF = V
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
85
Min
0
0
0
0
0
(3)
85
M36DR432AD, M36DR432BD
85
30
85
25
20
20
Max
(3)
(3)
(3)
(3)
(3)
(3)
M36DR432AD, M36DR432BD
Min
100
0
0
0
0
0
ELQV
100
.
Max
100
100
35
25
25
25
Min
120
0
0
0
0
0
120
Max
120
120
45
35
35
35
Unit
31/52
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns