HV51V7403HGL-5 Hynix Semiconductor, HV51V7403HGL-5 Datasheet

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HV51V7403HGL-5

Manufacturer Part Number
HV51V7403HGL-5
Description
4M x 4Bit EDO DRAM
Manufacturer
Hynix Semiconductor
Datasheet
DESCRIPTION
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utiliz-
ing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page-
Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be
packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high sys-
tem bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability
with high performance logic families such as Schottky TTL.
FEATURES
ORDERING INFORMATION
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.0.1/Apr.01
(S) : Self refresh,
Extended Data Out Mode capability
Read-modify-write capability
Multi-bit parallel test capability
TTL(3.3V) compatible inputs and outputs
/RAS only, CAS-before-/RAS, Hidden and self
refresh(L-version) capability
Power dissipation
Standby
Fast access time and cycle time
Active
HY51V(S)17403HGT/HG(L)T-5
HY51V(S)17403HGT/HG(L)T-6
HY51V(S)17403HGT/HG(L)T-7
HY51V(S)17403HGJ/HG(L)J-5
HY51V(S)17403HGJ/HG(L)J-6
HY51V(S)17403HGJ/HG(L)J-7
HY51V(S)17403HG/HGL-5
HY51V(S)17403HG/HGL-6
HY51V(S)17403HG/HGL-7
Part Number
432mW
50ns
Part No
0.36mW (L-version : Max)
7.2mW(CMOS level Max)
(L) : Low power
369mW
60ns
360mW
70ns
tRAC
50ns
60ns
70ns
Access Time
50ns
60ns
70ns
50ns
60ns
70ns
JEDEC standard pinout
24(26)pin plastic SOJ / 24(26)pin TSOP-II
Single power supply of 3.3V +/- 0.3V
Battery back up operation(L-version)
HY51V17403HGL
Refresh cycle
HY51V17403HG
Part No
tCAC
HY51V(S)17403HG/HGL
13ns
15ns
18ns
4M x 4Bit EDO DRAM
300mil 24(26)pin TSOP-II
104ns
124ns
84ns
Ref
300mil 24(26)pin SOJ
tRC
2K
2K
Package
Normal
32ms
PRELIMINARY
tHPC
20ns
25ns
30ns
128ms
L-part

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HV51V7403HGL-5 Summary of contents

Page 1

DESCRIPTION The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utiliz- ing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page- Mode as ...

Page 2

PIN CONFIGURATION I/ RAS 5 A11 6 A10 24(26) Pin Plastic SOJ PIN DESCRIPTION Pin /RAS /CAS /WE /OE A0-A11 ...

Page 3

ABSOLUTE MAXIMUM RATINGS Parameter Ambient Temperature Storage Temperature Voltage on Any Pin relative Voltage on V relative Short Circuit Output Current Power Dissipation Recommended DC OPERATING CONDITIONS Parameter Power Supply Voltage Input High ...

Page 4

DC CHARACTERISTICS Symbol Output Level VOH Output Level voltage(Iout= -2mA) Output Level VOL Output Level voltage(Iout=2mA) Operating current Average power supply operating current ICC1 ( /RAS, /CAS Cycling : tRC = tRC min) Standby current (TTL interface) I Power supply ...

Page 5

CAPACITANCE (Vcc=3.3V +/-10%, TA=25 C) Parameter Input capacitance (Address) Input capacitance (Clocks) Output capacitance (Data-in, Data-out) Note : 1. Capacitance measured with Boonton Meter or effective capacitance measuring method. 2. /CAS = V to disable D IH out AC CHARACTERISTICS ...

Page 6

Parameter /OE to Din delay time /OE delay time from Din /CAS delay time from Din Transition time ( Rise and Fall) Refresh period Refresh period (L-version) Read Cycle Parameter Access time from /RAS Access time from /CAS Access time ...

Page 7

Write Cycle Parameter Write command set-up time Write command hold time Write command pulse width Write command to /RAS lead time Write command to /CAS lead time Data-in set-up time Data-in hold time Read-Modify-Write Cycle Parameter Read-modify-write cycle time /RAS ...

Page 8

EDO Page Mode Cycle Parameter EDO mode cyle time EDO mode /RAS pulse width Access time from /CAS precharge /RAS hold time from /CAS precharge Output data hold time from /CAS low /CAS hold time referred /OE /CAS to /OE ...

Page 9

Notes : 1. AC measurements assume initial pause of 200us is required after power up followed by a minimum of eight initialization cycles ( any combination of cycles containing /RAS-only refresh or /CAS-before-/RAS refresh) If the internal ...

Page 10

Access time is determined by the longest among t 18. The 16M DRAM offers 16 bit time saving parallel test mode. Address CA0 and CA1 for the 4Mx4 are don’ t care during test mode. Test mode is set ...

Page 11

PACKAGE INFORMATION 24(26)pin SOJ 0.050(1.27) TYP 24(26)pin TSOP-II 0.670(17.04) MIN 0.678(17.24) MAX 0.012(0.30) MIN 0.020(0.50) MAX Rev.0.1/Apr.01 0.661(16.80) MIN 0.669(17.00) MAX 0.128(3.25) MIN 0.147(3.75) MAX 0.026(0.66) MIN 0.032(0.81) MAX 0.015(0.38) MIN 0.020(0.50) MAX 0.037(0.95) MIN 0.041(1.05) MAX 0.047(1.20) 0.050(1.27) 0.003(0.08) ...

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