LP0701N3 Supertex Inc, LP0701N3 Datasheet
LP0701N3
Related parts for LP0701N3
LP0701N3 Summary of contents
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... GS(th) (min) (max) TO-92 -1.25A -1.0V LP0701N3 Advanced MOS Technology These enhancement-mode (normally-off) transistors utilize a lat- eral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inher- ent in MOS devices ...
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Thermal Characteristics Package I (continuous)* D TO-92 -0.5A SO-8 -0. (continuous) is limited by max rated † Mounted on FR4 board, 25mm x 25mm x 1.57mm. Electrical Characteristics Symbol Parameter BV Drain-to-Source Breakdown Voltage ...
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Typical Performance Curves Output Characteristics -2.5 -2.0 -1.5 -1.0 -0 (volts) DS Transconductance vs. Drain Current 1 -15V DS 0.8 0.6 0.4 0 -1.0 I (amperes) D Maximum Rated Safe Operating ...
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Typical Performance Curves BV Variation with Temperature DSS 1.1 1.0 0.9 - Transfer Characteristics - -15V (volts) GS Capacitance vs. Drain-to-Source Voltage 200 100 ...