RN2973FS TOSHIBA Semiconductor CORPORATION, RN2973FS Datasheet
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RN2973FS
Manufacturer Part Number
RN2973FS
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Specifications of RN2973FS
Date_code
05+
Packing_info
SOT-763
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
•
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Q1, Q2 common)
Electrical Characteristics
Note:
Note 1: Total rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN1972FS, RN1973FS
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
B
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
R1
Characteristics
C
E
RN2972FS,RN2973FS
RN2972FS
RN2973FS
(Ta = 25°C) (Q1, Q2 common)
P
(Ta = 25°C)
Symbol
C
V
V
V
T
CBO
CEO
EBO
(Note 1)
I
T
stg
C
j
V
Symbol
CE (sat)
I
I
CBO
h
C
EBO
R1
FE
ob
−55~150
Rating
V
V
V
I
V
−20
−20
−50
150
C
−5
50
CB
EB
CE
CB
= −5 mA, I
1
= −5 V, I
= −20 V, I
= −5 V, I
= −10 V, I
Test Condition
B
C
C
Unit
mW
mA
°C
°C
E
E
V
V
V
= −0.25 mA
= 0
= −1 mA
= 0
= 0, f = 1 MHz
⎯
Weight: 0.001g (typ.)
RN2972FS,RN2973FS
JEDEC
JEITA
TOSHIBA
fS6
Equivalent Circuit
(top view)
0.1±0.05
17.6
37.6
Min
300
⎯
⎯
⎯
⎯
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
Q1
6
1
1
3
2
Typ.
1.2
22
47
⎯
⎯
⎯
1.0±0.05
0.8±0.05
5
2
2-1F1C
2007-11-01
Q2
−0.15
―
―
−100
−100
26.4
56.4
Max
4
3
⎯
⎯
4
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
6
5
Unit: mm
0.1±0.05
Unit
kΩ
nA
nA
pF
V