RN2973FS TOSHIBA Semiconductor CORPORATION, RN2973FS Datasheet

RN2973FS

Manufacturer Part Number

RN2973FS

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheets

1.RN2973FS.pdf (5 pages)

2.RN2973FS.pdf (5 pages)

Specifications of RN2973FS

Date_code

05+

Packing_info

SOT-763

Current page: 1 of 5
Download datasheet (123Kb)

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Equivalent Circuit and Bias Resistor Values

Absolute Maximum Ratings

(Q1, Q2 common)

Electrical Characteristics

Note:

Note 1: Total rating

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)

Two devices are incorporated into a fine pitch small mold (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

Complementary to RN1972FS, RN1973FS

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Collector output capacitance

Input resistor

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristics

RN2972FS,RN2973FS

RN2972FS

RN2973FS

(Ta = 25°C) (Q1, Q2 common)

(Ta = 25°C)

Symbol

CBO

CEO

EBO

(Note 1)

stg

Symbol

CE (sat)

CBO

EBO

−55~150

Rating

−20

−50

150

−5

= −5 mA, I

= −5 V, I

= −20 V, I

= −5 V, I

= −10 V, I

Test Condition

Unit

°C

= −0.25 mA

= 0

= −1 mA

= 0

= 0, f = 1 MHz

⎯

Weight: 0.001g (typ.)

RN2972FS,RN2973FS

JEDEC

JEITA

TOSHIBA

fS6

Equivalent Circuit

(top view)

0.1±0.05

17.6

37.6

Min

300

⎯

1.EMIITTER1

2.EMITTER2

3.BASE2

4.COLLECTOR2

5.BASE1

6.COLLECTOR1

Typ.

1.2

⎯

1.0±0.05

0.8±0.05

2-1F1C

2007-11-01

−0.15

―

−100

26.4

56.4

Max

⎯

(E1)

(E2)

(B2)

(C2)

(B1)

(C1)

Unit: mm

0.1±0.05

Unit

kΩ

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