MGF1952A MITSUBISHI [Mitsubishi Electric Semiconductor], MGF1952A Datasheet
MGF1952A
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MGF1952A Summary of contents
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... June /2004 DESCRIPTION The MGF1952A is designed for use band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES High gain and High P1dB Glp=7.0dB , P1dB=17dBm (Typ.) @ f=12GHz APPLICATION band power Amplifiers QUALITY GRADE GG ORDERING INFORMATION Tape & ...
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... Square shape electrode is Drain ‡…Š‡€ ‰…Š‡€ from "A" side view MITSUBISHI (2/5) MGF1952A Bottom Gate 2. Source 3 ...
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... Microwave Power MES FET (Leadless Ceramic Package) (Ta= VGS=0V 3.0 4.0 5.0 -3.0 (V) DS ˆ ‡ ˆ Œ ‰ ‡ MITSUBISHI (3/5) MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1952A I vs Ta=25deg.C VDS=3V -2.5 -2.0 -1.5 -1.0 -0.5 0.0 GATE TO SOURCE VOLTAGE V (V) GS June /2004 ...
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... Gate Source Drain Source MITSUBISHI (4/5) MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1952A K MAG/MSG Angle (dB) -24.7 0.21 24.4 -51.3 0.38 21.4 -66.0 0.51 19.7 -83.0 0.64 18.5 -94.1 0.77 17.5 0.90 16.8 1.01 15.5 1.10 13.7 1.15 12.6 1.17 11.9 1.25 11.0 1.29 10.2 9.6 1.32 9.2 61.7 1.33 8.7 47.0 1.25 8.8 37.8 1.18 8.8 29.2 1.16 8 ...
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... The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer. MITSUBISHI SEMICONDUCTOR <GaAs FET> Microwave Power MES FET (Leadless Ceramic Package) MITSUBISHI (5/5) MGF1952A June /2004 ...