SI4378DY-E3 VISHAY [Vishay Siliconix], SI4378DY-E3 Datasheet

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SI4378DY-E3

Manufacturer Part Number
SI4378DY-E3
Description
N-Channel 20-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
Document Number: 72918
S-40854—Rev. A, 03-May-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Ordering Information: Si4378DY—E3
Surface Mounted on 1” x 1” FR4 Board.
i
DS
20
20
(V)
J
ti
G
S
S
S
t A bi
1
2
3
4
Si4378DY-T1—E3 (with Tape and Reel)
J
J
0.0027 @ V
0.0042 @ V
a
a
= 150_C)
= 150_C)
t
a
a
Top View
Parameter
Parameter
SO-8
r
DS(on)
a
a
GS
GS
(W)
N-Channel 20-V (D-S) MOSFET
= 4.5 V
= 2.5 V
8
7
6
5
a
D
D
D
D
A
L = 0.1 mH
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
25
22
(A)
Symbol
Symbol
T
R
R
R
V
V
J
I
I
P
P
, T
DM
I
I
I
AS
thJA
thJF
DS
GS
D
D
S
D
D
FEATURES
D Ultra Low On-Resistance Using High Density
D Q
D 100% R
APPLICATIONS
D Synchronous Rectification
D Point-Of-Load
stg
TrenchFETr Gen II Power MOSFET Technology
g
G
Optimized
N-Channel MOSFET
g
10 secs
Typical
Tested
2.9
3.5
2.2
25
20
29
67
13
D
S
−55 to 150
"12
20
70
40
Steady State
Maximum
Vishay Siliconix
1.3
1.6
19
13
35
80
16
1
Si4378DY
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
1

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SI4378DY-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4378DY—E3 Si4378DY-T1—E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) ...

Page 2

... Si4378DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... Document Number: 72918 S-40854—Rev. A, 03-May-04 New Product 10000 = 2 0.015 0.012 0.009 0.006 T = 25_C J 0.003 0.000 0.8 1.0 1.2 Si4378DY Vishay Siliconix Capacitance C iss 8000 6000 4000 C rss C 2000 oss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si4378DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA D 0.2 −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J Limited by r Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72918 S-40854—Rev. A, 03-May-04 New Product −2 − Square Wave Pulse Duration (sec) Si4378DY Vishay Siliconix 1 10 www.vishay.com 5 ...

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