INA-03100 Agilent(Hewlett-Packard), INA-03100 Datasheet - Page 2

• Manufacturer Part Number: INA-03100
• Description: Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
• Manufacturer: Agilent(Hewlett-Packard)

INA-03100 Absolute Maximum Ratings
INA-03100 Electrical Specifications
INA-03100 Typical Scattering Parameters
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
Notes:
1. The recommended operating current range for this device is 8 to 20 mA. Typical performance as a function of current is
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-03100 mounted in a 70 mil stripline package.
Parameter
Device Current
Power Dissipation
RF Input Power
Junction Temperature
Storage Temperature
Symbol
VSWR
G
f
ISO
NF
P
IP
t
V
dV/dT
3 dB
D
G
1 dB
d
MODELS section of the Avantek Microwave Semiconductors databook.
on the following page.
P
3
Freq.
GHz
P
0.05
0.10
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.50
3.00
Power Gain (|S
Gain Flatness
3 dB Bandwidth
Reverse Isolation (|S
Input VSWR
Output VSWR
50
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
Parameters and Test Conditions
Mag
0.35
0.35
0.33
0.31
0.27
0.23
0.19
0.16
0.13
0.12
0.13
0.18
0.40
0.81
Noise Figure
[2,3]
S
11
21
Ang
176
172
165
150
137
125
113
–52
–86
|
99
76
51
21
–5
2
)
12
|
2
)
26.6
26.6
26.4
26.1
25.6
25.0
24.5
24.0
23.8
23.6
23.6
23.8
24.7
25.6
dB
21.4
21.3
21.0
20.1
19.0
17.8
16.7
15.9
15.4
15.2
15.5
15.5
17.2
19.1
S
Mag
Absolute Maximum
21
[1,3]
–65 to 200 C
[2]
–106
–132
–167
Ang
–15
–29
–42
–53
–63
–72
–81
–88
–97
+13 dBm
, T
: I
200 mW
–4
–8
50 mA
200 C
6-103
d
A
= 12 mA, Z
f = 1.5 GHz
f = 1.5 GHz
[1]
f = 1.5 GHz
f = 0.01 to 2.0 GHz
f = 0.01 to 2.0 GHz
f = 0.01 to 2.0 GHz
f = 0.01 to 2.0 GHz
f = 1.5 GHz
f = 1.5 GHz
f = 1.5 GHz
= 25 C
(Z
–36.0
–36.5
–36.4
–36.0
–37.6
–36.1
–35.1
–36.9
–36.4
–35.6
–34.1
–34.3
–30.2
–27.0
dB
O
= 50 , T
[1]
O
S
= 50
Mag
.016
.015
.015
.016
.013
.016
.018
.014
.015
.017
.020
.019
.031
.045
12
Ang
A
–13
–14
–13
–16
–21
–12
–11
–13
–12
Notes:
1. Permanent damage may occur if
2. T
3. Derate at 14.3 mW/ C for T
–4
–5
–5
–9
= 25 C, I
8
any of these limits are exceeded.
186 C.
Mounting Surface
Thermal Resistance
Units
mV/ C
dBm
dBm
psec
GHz
dB
dB
dB
dB
V
Mag
.56
.56
.56
.54
.54
.53
.53
.54
.55
.56
.58
.60
.67
.70
jc
d
Min.
= 70 C/W
S
= 12 mA)
3.5
22
(T
MS
Ang
–10
–12
–15
–17
–20
–25
–38
–64
–1
–3
–4
–7
–8
–9
) = 25 C.
Typ. Max.
26.0
2.0
3.0
200
2.8
2.5
1.0
4.5
10
+ 5
37
0.5
5
5
MS
[2]
1.25
1.30
1.30
1.33
1.58
1.49
1.43
1.72
1.65
1.54
1.24
1.18
0.53
0.03
>
:
k
5.5