IS75V16F128GS32-7065BI ISSI [Integrated Silicon Solution, Inc], IS75V16F128GS32-7065BI Datasheet - Page 2

• Manufacturer Part Number: IS75V16F128GS32-7065BI
• Description: 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
• Manufacturer: ISSI [Integrated Silicon Solution, Inc]

IS75V16F128GS32
2
GENERAL DESCRIPTION
This 107-ball MCP is a space-saving combination of 3 memories: two 64Mbit Flash and one 32Mbit Pseudo SRAM.
Each 64Mbit Flash (Flash1 and Flash 2) contains 4,194,304 words and the 32Mbit PSRAM contains 2,097,152
words. Each word is 16 bits wide. Data lines DQ0-DQ15 handle the access for all three memories. Write Enable,
Output Enable, and A0-A20 are shared among the three memories. Single Byte data on the PSRAM can be
accessed one at a time on DQ0-DQ7 or DQ8-DQ15 by using LB or UB, respectively.
The package uses a 3.0V power supply for all operations. No other source is required for program and erase operations.
The flash can be programmed in system using this 3.0V supply, or can be programmed in a standard EPROM
programmer.
The flash chips are compatible with the JEDEC Flash command set standard. The flash access time is 70ns and the
PSRAM access time is 65ns.
Each Flash memory implements an architecture composed of two virtual banks that allows simultaneous operation on
each bank. Optimized performance can be achieved by first initializing a program or erase function in one bank, then
immediately starting a read from the other bank. Both operations would then be operating simultaneously on the same
chip, with zero latency.
MCP BLOCK DIAGRAM
RESET
RESET
WP/ACC
A0-A21
CEf
CEf
CE1r
CE2r
WE
2
1
1
2
UB
OE
LB
PE
A0-A21
A0-A21
A0-A20
Flash Memory
Flash Memory
Integrated Silicon Solution, Inc. — www.issi.com —
V
V
V
(Flash 1)
(Flash 2)
32-MBIT
64-MBIT
32-MBIT
CCr
PSRAM
CCf 2
CCf 1
GND
GND
GND
RY/BY 2
RY/BY 1
DQ0-DQ15
PRELIMINARY INFORMATION Rev. 00D
ISSI
1-800-379-4774
03/24/03
®