SI4812BDY-E3 Vishay, SI4812BDY-E3 Datasheet
SI4812BDY-E3
Related parts for SI4812BDY-E3
SI4812BDY-E3 Summary of contents
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... For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 73038 S-41509—Rev. A, 09-Aug-04 New Product I (A) D 9.5 7.7 I (A) F 1.4 Si4812BDY-T1—E3 (with Tape and Reel) = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C ...
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... Si4812BDY Vishay Siliconix MOSFET + SCHOTTKY SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current (MOSFET + Schottky) (MOSFET + Schottky) a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a a Schottky Diode Forward Voltage Schottky Diode Forward Voltage ...
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... Document Number: 73038 S-41509—Rev. A, 09-Aug-04 New Product 1300 1040 780 520 260 1.6 1.4 1.2 1.0 0.8 0 Si4812BDY Vishay Siliconix Transfer Characteristics T = 125_C C 25_C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V − Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss − ...
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... Si4812BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 25_C J 1 0.1 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Reverse Current (Schottky 0 0.01 0.001 0.0001 0.00001 − Junction Temperature (_C) J www.vishay.com 4 New Product ...
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... Document Number: 73038 S-41509—Rev. A, 09-Aug-04 New Product −2 − Square Wave Pulse Duration (sec) −2 − Square Wave Pulse Duration (sec) Si4812BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 72_C/W ...