AS4C8M16S-7BCN Alliance Memory, AS4C8M16S-7BCN Datasheet - Page 18
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AS4C8M16S-7BCN
Manufacturer Part Number
AS4C8M16S-7BCN
Description
DRAM 128Mb, 3.3V, 143Mhz 8M x 16 SDRAM
Manufacturer
Alliance Memory
Datasheet
1.AS4C8M16S-7BCN.pdf
(53 pages)
Specifications of AS4C8M16S-7BCN
Rohs
yes
Data Bus Width
16 bit
Organization
8 M x 16
Memory Size
128 MB
Maximum Clock Frequency
143 MHz
Access Time
5 ns, 5.4 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
3 V
Maximum Operating Current
120 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Table 15. Recommended D.C. Operating Conditions
Operating Current
Precharge Standby Current in non-power down mode
Precharge Standby Current in non-power down mode
Precharge Standby Current in power down mode
Precharge Standby Current in power down mode
Active Standby Current in non-power down mode
Active Standby Current in non-power down mode
Operating Current (Burst mode)
Refresh Current
Self Refresh Current
t
t
t
One bank active
Input signals are changed every 2clks
t
t
Input signals are changed every 2clks
CKE ≥ V
t
t
RC
t
CK
CK
CK
CK
CK
RC
CKE ≤ 0.2V ; for other inputs V
CK
FEBRUARY 2011
≥ t
= ∞, CLK ≤ V
= ∞, CKE ≤ V
= 15ns, CKE ≤ V
= 15ns, CKE ≥ V
=t
≥ t
= 15ns, CS# ≥ V
CK
RC
RC
(min),
(min), Outputs Open
(min)
IH
(min), CLK ≤ V
Description/Test condition
Outputs Open, Multi-bank interleave
IL
IL
(max), CKE ≥ V
(max)
IH
IH
IL
(max)
(min), CS# ≥ V
(min), CKE ≥ V
IL
(max), t
IH
≥ V
IH
CK
DD
IH
IH
= ∞
- 0.2, V
(min)
IL
≤ 0.2V
18
Symbol
I
I
I
I
I
DD2NS
I
DD2PS
DD3NS
I
I
I
I
DD2N
DD2P
DD3N
DD1
DD4
DD5
DD6
(VDD = 3.3V ± 0.3V, T
120
140
200
20
15
30
25
-6
2
2
2
Max.
-7
110
130
200
20
15
30
25
2
2
2
A
= 0~70°C)
AS4C8M16S
Unit Note
mA
mA
3, 4
3
3