AS4C8M16S-6TAN Alliance Memory, AS4C8M16S-6TAN Datasheet - Page 46

• Manufacturer Part Number: AS4C8M16S-6TAN
• Description: DRAM 128Mb, 3.3V, 166Mhz 8M x 16 SDRAM
• Manufacturer: Alliance Memory

Specifications of AS4C8M16S-6TAN

• Rohs: yes
• Data Bus Width: 16 bit
• Organization: 8 Mbit x 16
• Package / Case: TSOP-54
• Memory Size: 128 Mbit
• Maximum Clock Frequency: 143 MHz
• Access Time: 5.4 ns
• Supply Voltage - Max: 4.6 V
• Supply Voltage - Min: - 1 V
• Maximum Operating Current: 110 mA
• Maximum Operating Temperature: + 105 C
• Factory Pack Quantity: 108

Figure 37. Full Page Write Cycle
A0-A9,
A11
CS#
CLK
CKE
RAS#
CAS#
WE#
A10
DQM
DQ
BA0,1
FEBRUARY 2011
Hi-Z
Activate
Cammand
Bank A
High
RAx
RAx
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Write
Command Cammand
Bank A
CAx
DAx
1
DAx+1 DAx+2 DAx+3 DAx-
Activate
Bank B
RBx
The burst counter wraps
from the highest order
page address back to zero
during this time interval
RBx
(Burst Length=Full Page)
DAx
DAx+1
Write
Command
Bank B
Full Page burst operation does not
terminate when the burst length is
satisfied; the burst counter increments
and continues bursting beginning with
the starting address
CBx
DBx
DBx+5
46
DBx+1 DBx+2 DBx+3 DBx+4
Burst Stop
Command
Precharge
Command
Bank B
Data is ignored
Don’t Care
Command
Activate
Bank B
RBy
RBy
AS4C8M16S