AS4C8M16S-6TAN Alliance Memory, AS4C8M16S-6TAN Datasheet - Page 46
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AS4C8M16S-6TAN
Manufacturer Part Number
AS4C8M16S-6TAN
Description
DRAM 128Mb, 3.3V, 166Mhz 8M x 16 SDRAM
Manufacturer
Alliance Memory
Datasheet
1.AS4C8M16S-7BCN.pdf
(53 pages)
Specifications of AS4C8M16S-6TAN
Rohs
yes
Data Bus Width
16 bit
Organization
8 Mbit x 16
Package / Case
TSOP-54
Memory Size
128 Mbit
Maximum Clock Frequency
143 MHz
Access Time
5.4 ns
Supply Voltage - Max
4.6 V
Supply Voltage - Min
- 1 V
Maximum Operating Current
110 mA
Maximum Operating Temperature
+ 105 C
Factory Pack Quantity
108
Figure 37. Full Page Write Cycle
A0-A9,
A11
CS#
CLK
CKE
RAS#
CAS#
WE#
A10
DQM
DQ
BA0,1
FEBRUARY 2011
Hi-Z
Activate
Cammand
Bank A
High
RAx
RAx
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Write
Command Cammand
Bank A
CAx
DAx
1
DAx+1 DAx+2 DAx+3 DAx-
Activate
Bank B
RBx
The burst counter wraps
from the highest order
page address back to zero
during this time interval
RBx
(Burst Length=Full Page)
DAx
DAx+1
Write
Command
Bank B
Full Page burst operation does not
terminate when the burst length is
satisfied; the burst counter increments
and continues bursting beginning with
the starting address
CBx
DBx
DBx+5
46
DBx+1 DBx+2 DBx+3 DBx+4
Burst Stop
Command
Precharge
Command
Bank B
Data is ignored
Don’t Care
Command
Activate
Bank B
RBy
RBy
AS4C8M16S