AS4C8M16S-6TCN Alliance Memory, AS4C8M16S-6TCN Datasheet - Page 43

• Manufacturer Part Number: AS4C8M16S-6TCN
• Description: DRAM 128M SDRAM 8M X 16 166MHz
• Manufacturer: Alliance Memory

Specifications of AS4C8M16S-6TCN

• Rohs: yes
• Data Bus Width: 16 bit
• Organization: 8 M x 16
• Package / Case: TSOP II-54
• Memory Size: 128 Mbit
• Maximum Clock Frequency: 166 MHz
• Access Time: 5.4 ns
• Supply Voltage - Max: 4.6 V
• Supply Voltage - Min: 1 V
• Maximum Operating Current: 120 mA
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT

Figure 35. Auto Precharge after Write Burst
A0-A9,
A11
CLK
CKE
CS#
RAS#
CAS#
WE#
A10
DQM
DQ
BA0,1
FEBRUARY 2011
Hi-Z
High
Activate
Cammand
Bank A
RAx x
RAx
T0
T1
T2 T3
Write
Command
Bank A
DAx0 DAx1 DAx2 DAx3 DBx0
CAx
Activate
Command
Bank B
RBx
RBx
T4
T5
Write with
Auto Precharge
Command
Bank B
T6
CBx
T7
DBx1 DBx2 DBx3 DAy0 DAy1 DAy2 DAy3
T8
T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Write with
Auto Precharge
Command
Bank A
CAy
43
Begin Auto
Precharge
Bank B
(Burst Length=4)
t
DAL
Activate
Command
Bank B
RBy
RBy
Begin Auto
Precharge
Bank A
Write with
Auto Precharge
Command
Bank B
DBy0
CBy
Rev 1.0
Don’t Care
DBy1 DBy2 DBy3
AS4C8M16S